JANKCB2N5416-Transistor-Die Overview
The JANKCB2N5416-Transistor-Die is a precision semiconductor device designed for high-performance electronic circuits. This transistor die offers reliable amplification and switching capabilities essential for industrial and consumer electronics applications. Manufactured using advanced fabrication processes, it ensures consistent electrical characteristics and thermal stability. Ideal for integration into custom modules or hybrid circuits, this transistor die supports efficient power management and signal processing. Its compact form factor and robust design make it suitable for applications requiring durability and precision control. For detailed specifications and sourcing, visit the IC Manufacturer portal.
JANKCB2N5416-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor (BJT) Die |
| Collector-Emitter Voltage (Vce) | 160 V (maximum) |
| Collector Current (Ic) | 1.5 A (continuous) |
| Power Dissipation (Pd) | 30 W (at 25??C) |
| DC Current Gain (hFE) | 40 to 160 (varies by operating point) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Junction Temperature (Tj) | -65??C to +150??C |
| Package | Transistor Die (bare chip) |
| Base-Emitter Voltage (Vbe) | 5 V (maximum) |
JANKCB2N5416-Transistor-Die Key Features
- High Voltage Handling: Supports collector-emitter voltages up to 160 V, enabling use in high-voltage switching applications.
- Robust Current Capacity: Continuous collector current rating of 1.5 A allows for efficient power amplification in demanding circuits.
- Wide Operating Temperature Range: Maintains performance from -65??C to +150??C, ensuring reliability in harsh industrial environments.
- High Transition Frequency: 100 MHz typical frequency supports high-speed switching and amplification in RF and signal processing applications.
- Bare Die Format: Facilitates custom packaging and integration into hybrid modules, offering design flexibility for specialized applications.
- Consistent Current Gain: DC gain between 40 and 160 delivers predictable amplification characteristics for precision circuit design.
- Low Base-Emitter Voltage: Maximum Vbe of 5 V helps reduce power loss and improve efficiency in driver stages.
Typical Applications
- Power Amplification in Industrial Control Systems: This transistor die is suitable for amplifying signals in motor drives, automation controllers, and power conversion equipment.
- High-Voltage Switches: Its voltage and current capabilities make it ideal for use in power switching circuits and relay drivers.
- Signal Processing Modules: The high transition frequency supports use in analog signal conditioning and RF amplifiers.
- Custom Semiconductor Modules: The bare die format allows integration into hybrid circuits and custom semiconductor packages for specialized electronic solutions.
JANKCB2N5416-Transistor-Die Advantages vs Typical Alternatives
This transistor die provides superior voltage handling and current capacity compared to many standard transistor dies, enabling higher performance in power and switching applications. Its bare die format offers greater integration flexibility than packaged devices, facilitating custom solutions. The wide operating temperature range and stable current gain enhance reliability and precision, making it preferable for industrial environments where robustness is critical.
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JANKCB2N5416-Transistor-Die Brand Info
The JANKCB2N5416-Transistor-Die is a product offered by JANKC Semiconductor, a manufacturer specializing in high-quality discrete semiconductor components for industrial and commercial applications. Known for stringent quality control and advanced fabrication technologies, JANKC provides reliable transistor dies designed for integration into power electronics, signal amplification, and switching circuits. Their product portfolio supports a wide range of semiconductor solutions aimed at enhancing circuit performance and durability.
