JANS2N3634UB-Transistor High-Speed Switching NPN Transistor in TO-39 Metal Can Package

  • This transistor amplifies electrical signals, enabling precise control in various electronic circuits.
  • Its voltage rating supports stable operation under demanding electrical conditions, ensuring consistent performance.
  • The package design offers a compact footprint, facilitating efficient board space utilization in device assembly.
  • Ideal for use in signal processing applications, it enhances circuit responsiveness and overall system reliability.
  • Manufactured to meet strict quality standards, it ensures long-term durability and dependable operation.
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JANS2N3634UB-Transistor Overview

The JANS2N3634UB is a high-performance bipolar junction transistor (BJT) designed for robust switching and amplification in industrial electronics. This transistor offers reliable operation with a collector-emitter voltage rating suitable for medium power applications, ensuring durability under demanding conditions. Featuring a complementary NPN configuration in a hermetic metal can package, it is optimized for use in precision circuits requiring stable gain and low noise characteristics. Engineers and sourcing specialists will find this device well-suited for aerospace, military, and industrial control systems where quality and consistency are paramount. For detailed sourcing and additional semiconductor components, visit IC Manufacturer.

JANS2N3634UB-Transistor Technical Specifications

Parameter Value Units
Collector-Emitter Voltage (VCEO) 100 V
Collector Current (IC) 1.5 A
Power Dissipation (Ptot) 20 W
Gain Bandwidth Product (fT) 100 MHz
DC Current Gain (hFE) 40 to 120 (typical)
Transition Frequency 100 MHz
Operating Temperature Range -65 to +200 ??C
Package Type Hermetic Metal Can N/A

JANS2N3634UB-Transistor Key Features

  • High Voltage Handling: Supports up to 100V collector-emitter voltage, enabling use in medium-power switching applications with greater design flexibility.
  • Robust Current Capability: Can conduct collector currents up to 1.5A, making it suitable for load-driving and amplification tasks in industrial circuits.
  • Wide Temperature Range: Operates reliably from -65??C to +200??C, ensuring stable performance in harsh environments such as aerospace and military systems.
  • Hermetic Metal Can Package: Provides excellent mechanical protection and environmental sealing for improved long-term reliability.

Typical Applications

  • Power amplification and switching in aerospace and military electronic equipment where reliability and precision are critical.
  • Industrial control systems requiring stable transistor gain and durability under thermal stress.
  • High-frequency amplifier stages benefiting from the transistor’s 100 MHz gain bandwidth product.
  • Precision analog circuits where low noise and stable current gain across temperature extremes are essential.

JANS2N3634UB-Transistor Advantages vs Typical Alternatives

This transistor provides superior voltage and current ratings combined with a hermetic metal can package, offering enhanced reliability compared to plastic-encapsulated alternatives. Its wide operating temperature range and robust power dissipation make it ideal for demanding industrial and aerospace applications. The device??s stable gain and frequency performance ensure precise control and amplification, making it a preferred choice for engineers seeking dependable, long-lasting transistor solutions.

JANS2N3634UB-Transistor Brand Info

The JANS2N3634UB is a military-grade transistor typically sourced from manufacturers specializing in aerospace and defense components. It adheres to JAN (Joint Army-Navy) standards, indicating rigorous testing and qualification for high-reliability applications. This device is often supplied by reputable semiconductor manufacturers with a legacy of producing hermetically sealed transistors designed for harsh environments. The JAN designation underscores compliance with stringent quality and performance criteria required for mission-critical electronic systems.

FAQ

What is the maximum collector-emitter voltage rating for this transistor?

The transistor has a maximum collector-emitter voltage rating of 100 volts, allowing it to handle medium voltage applications safely within its specified limits.

Can this device operate in extreme temperature environments?

Application

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