JANKCCP2N5151-Transistor-Die Overview
The JANKCCP2N5151-Transistor-Die is a high-performance semiconductor component designed for integration into advanced electronic circuits. This transistor die offers reliable switching and amplification capabilities, suited for industrial-grade applications demanding precision and stability. It features optimized electrical characteristics that ensure consistent operation under varying environmental conditions, making it ideal for engineers and sourcing specialists focused on durability and performance. Sourced from a reputable IC Manufacturer, this transistor die supports compact system designs and efficient power management in complex electronic assemblies.
JANKCCP2N5151-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor (BJT) Die |
| Collector-Emitter Voltage (Vce) | 60 V |
| Collector Current (Ic) | 1.5 A |
| Gain Bandwidth Product (fT) | 100 MHz |
| Power Dissipation (Pd) | 1 W (at 25??C) |
| Base-Emitter Voltage (Vbe) | 0.7 V (typical) |
| Package Type | Bare Die (Transistor Die) |
| Operating Temperature Range | -55??C to +150??C |
| Transition Frequency | 100 MHz |
JANKCCP2N5151-Transistor-Die Key Features
- High current handling: Supports collector currents up to 1.5 A, enabling robust power control in demanding circuits.
- Wide voltage range: With a maximum collector-emitter voltage of 60 V, it is suitable for medium-voltage electronic applications.
- Fast switching speeds: The gain bandwidth product of 100 MHz allows efficient operation in high-frequency amplification and switching tasks.
- Thermal stability: Rated for operation from -55??C to +150??C, ensuring reliable function in harsh industrial environments.
Typical Applications
- Power amplification in industrial control systems requiring stable transistor performance under varying loads and temperatures.
- Switching components in automotive electronics, where reliability and consistent switching speeds are critical.
- Signal processing circuits in communication devices demanding high-frequency transistor operation.
- Custom semiconductor module fabrication where bare transistor dies are integrated into specialized packages.
JANKCCP2N5151-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers a balanced combination of collector current capacity and voltage tolerance, outperforming many alternatives in power handling without compromising switching speed. Its bare die form allows for flexible integration into custom assemblies, which enhances design adaptability versus pre-packaged devices. Additionally, its wide operating temperature range ensures consistent reliability in industrial environments, making it a preferred choice for sourcing specialists focused on durable, efficient semiconductor solutions.
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JANKCCP2N5151-Transistor-Die Brand Info
The JANKCCP2N5151-Transistor-Die is manufactured by JANKC Semiconductor, a recognized player in the semiconductor industry known for delivering high-quality transistor dies and discrete components. JANKC specializes in providing bare die solutions that enable OEMs and electronic manufacturers to achieve tailored device integration with superior electrical performance. This product exemplifies the brand??s commitment to precision engineering and robust reliability, supporting a wide range of industrial and communications applications worldwide.
FAQ
What type of transistor is the JANKCCP2N5151-Transistor-Die?
The device is an NPN bipolar junction transistor (BJT) in bare die form. This type provides efficient current amplification and switching capabilities suitable for a variety of electronic circuit designs.
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What are the maximum voltage and current ratings for this transistor die?
The transistor die supports a maximum collector-emitter voltage of 60 V and a collector current up to 1.5 A, making it suitable for medium-power applications requiring reliable performance.
