JANTXV2N4033UA-Transistor NPN High-Power Amplifier in TO-220 Package by ON Semiconductor

  • This transistor enables efficient switching and amplification, improving circuit performance and control.
  • It features a voltage rating suitable for moderate power applications, ensuring stable operation under load.
  • The compact package design allows for board-space savings, aiding in dense electronic assemblies.
  • Ideal for use in power regulation circuits, it helps maintain consistent output in varying conditions.
  • Manufactured to meet standard quality tests, it offers dependable performance over extended use.
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JANTXV2N4033UA-Transistor Overview

The JANTXV2N4033UA transistor is a high-reliability, NPN bipolar junction transistor designed for demanding industrial and aerospace applications. It offers robust electrical performance with a maximum collector-emitter voltage of 100 V and a collector current rating up to 5 A. Manufactured to meet stringent JAN (Joint Army-Navy) standards, this transistor ensures enhanced durability in harsh environments. Its high gain and low saturation voltage make it suitable for switching and amplification tasks, offering engineers a dependable solution for power management and signal processing. For detailed specifications and procurement, visit IC Manufacturer.

JANTXV2N4033UA-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 120 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 5 A continuous
Power Dissipation (Ptot) 30 W
DC Current Gain (hFE) 40 to 320
Transition Frequency (fT) Minimum 5 MHz
Junction Temperature (TJ) ?C65??C to +200??C

JANTXV2N4033UA-Transistor Key Features

  • High voltage tolerance: With a collector-emitter voltage rating of 100 V, the transistor supports high-voltage switching applications reliably.
  • Robust current capacity: Capable of continuous collector currents up to 5 A, ideal for power amplification and control circuits.
  • Wide operating temperature range: The device operates from ?C65??C to +200??C, ensuring stability in extreme environmental conditions.
  • JAN standard qualification: Ensures enhanced reliability and quality for military, aerospace, and industrial uses.

Typical Applications

  • Power switching and amplification in industrial control systems where high voltage and current capability are critical.
  • Signal amplification circuits requiring stable gain across a wide frequency range.
  • High-reliability aerospace and military electronics demanding components compliant with stringent JAN standards.
  • General-purpose switching applications in harsh environments with significant temperature fluctuations.

JANTXV2N4033UA-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and performance under extreme conditions compared to general-purpose alternatives. Its high-voltage and high-current ratings combined with JAN certification provide enhanced ruggedness and long-term stability. Engineers benefit from its broad temperature tolerance and consistent gain, making it a preferred choice for mission-critical industrial and aerospace applications where precision and durability are essential.

JANTXV2N4033UA-Transistor Brand Info

The JANTXV2N4033UA transistor is produced under the Joint Army-Navy (JAN) standard, a hallmark of military-grade semiconductor components. These devices are typically manufactured by established semiconductor companies specializing in high-reliability components for defense and aerospace sectors. The JAN designation signifies rigorous quality controls and testing procedures, ensuring each transistor meets strict performance and environmental requirements. This product is recognized for its dependable operation in critical systems requiring long service life and resistance to harsh conditions.

FAQ

What does the JAN designation signify for the JANTXV2N4033UA transistor?

The JAN designation indicates that the transistor meets military-grade standards for quality and reliability. This means the device has undergone stringent testing for parameters such as temperature extremes, electrical performance, and mechanical stress, making it suitable for aerospace and defense applications.

Can this transistor operate in high-temperature environments?

Yes, the device is rated to function reliably across a wide junction temperature range from ?C65??C to +200??C, enabling its use in environments with extreme temperature variations without compromising performance.

What are the main electrical limits for this transistor?

The maximum collector-emitter voltage is 100

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