JANSR2N3637L-Transistor NPN Amplifier Transistor in TO-92 Package – JAN Military Grade

JANSR2N3637L-Transistor Overview

The JANSR2N3637L-Transistor is a high-performance NPN bipolar junction transistor (BJT) designed for industrial and commercial applications requiring robust switching and amplification capabilities. Engineered for efficient current handling with a voltage rating suitable for medium-power circuits, this transistor delivers reliable operation in demanding environments. Its optimized construction ensures low saturation voltage and consistent gain, making it ideal for power regulation, signal amplification, and switching tasks. Available through IC Manufacturer, it offers engineers a dependable solution to enhance circuit efficiency while maintaining thermal stability and longevity.

JANSR2N3637L-Transistor Technical Specifications

JANSR2N3637L-Transistor Key Features

• High current capacity: Supports up to 5 A collector current, enabling use in power switching and driver circuits with robust load handling.
• Wide voltage ratings: Collector-emitter voltage up to 60 V ensures suitability for medium-voltage applications.
• Stable gain performance: DC current gain range of 40 to 160 provides consistent amplification across specified currents.
• Thermally resilient package: TO-39 metal can package offers excellent heat dissipation for enhanced reliability in industrial environments.

Typical Applications

• Power amplification in industrial control systems, where reliable current switching and gain stability are critical for performance and safety.
• Motor driver circuits requiring high current handling with thermal stability to maintain continuous operation.
• Switching regulators and power management modules where efficient switching and low saturation voltage reduce power losses.
• General-purpose amplification in audio and signal processing equipment that demands consistent gain and low noise.

JANSR2N3637L-Transistor Advantages vs Typical Alternatives

This transistor stands out by combining a high collector current rating with a robust voltage tolerance and stable gain characteristics, outperforming many generic BJTs in similar applications. Its metal can package enhances thermal management, reducing failure risk under heavy load. These attributes offer engineers improved power efficiency, reliability, and easier integration into demanding industrial circuits compared to typical plastic-encapsulated alternatives.

JANSR2N3637L-Transistor Brand Info

The JANSR2N3637L is manufactured under strict military and industrial standards, often associated with legacy semiconductor producers specializing in rugged, reliable discrete components. This transistor follows the JEDEC standard numbering system, indicating its compliance with established quality and performance benchmarks. Its ??JAN?? prefix denotes Joint Army-Navy specifications, ensuring suitability for aerospace, defense, and industrial applications where durability and consistency are paramount.

FAQ

What is the maximum voltage rating for the JANSR2N3637L transistor?

The maximum collector-emitter voltage (V_CEO) for this transistor is 60 V. Additionally, the collector-base voltage (V_CBO) is rated at 80 V, providing ample headroom for medium-voltage circuit designs.

Can the transistor handle continuous high current