JAN2N6341-Transistor NPN High-Voltage Amplifier Transistor in TO-126 Package

JAN2N6341-Transistor Overview

The JAN2N6341-Transistor is a high-performance NPN bipolar junction transistor designed for power amplification and switching applications. Engineered to meet stringent military standards, it offers robust electrical characteristics including a collector current rating suitable for medium power levels and a high voltage tolerance. Its design supports reliable operation in demanding industrial and defense environments, ensuring consistent performance in circuits requiring precise gain and saturation properties. The device is packaged for efficient thermal dissipation and durability, making it a preferred choice for engineers sourcing reliable power transistors. For detailed technical data and sourcing, visit IC Manufacturer.

JAN2N6341-Transistor Technical Specifications

JAN2N6341-Transistor Key Features

• High Voltage Tolerance: With a collector-base voltage rating of 120 V, it supports circuits requiring high voltage switching or amplification without compromise.
• Robust Collector Current Capacity: Capable of handling up to 8 A, it ensures reliable power delivery in medium-power applications.
• Wide DC Gain Range: The gain characteristic from 40 to 160 offers flexibility in designing amplification stages with precise control over signal amplification.
• Thermally Resilient Packaging: Designed to operate at junction temperatures up to 200??C, enhancing reliability in harsh industrial environments.

Typical Applications

• Power amplification in communication equipment, where the transistor handles moderate power signals with high linearity and efficiency.
• Switching applications in industrial control systems requiring robust, high-current switching capabilities.
• Driver stages in motor control circuits, benefiting from its high collector current rating and gain stability.
• Military and aerospace electronic systems where compliance with stringent JAN (Joint Army-Navy) specifications is mandatory for reliability.

JAN2N6341-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current handling compared to standard transistor alternatives, delivering enhanced reliability and performance under demanding conditions. Its broad gain range and military-grade specification ensure stable operation in critical applications where precision and durability are essential. These factors make it an optimal choice for engineers seeking a rugged, high-performance transistor with proven reliability in industrial and defense sectors.

JAN2N6341-Transistor Brand Info

The JAN2N6341-Transistor is manufactured under the JAN (Joint Army-Navy) standard, indicating compliance with military-grade quality and reliability criteria. This classification ensures the transistor meets rigorous testing for electrical performance, environmental robustness, and long-term endurance. Often produced by established semiconductor manufacturers specializing in defense and industrial components, this product is intended for use in applications requiring certified ruggedness and dependable operation over extended lifetimes.

FAQ

What type of transistor is the JAN2N6341?

The JAN2N6341 is an NPN bipolar junction transistor designed primarily for medium power amplification and switching applications. It features high-voltage ratings and can handle significant collector current, making it suitable for various industrial and military uses.

What are the maximum voltage ratings for this transistor?

This transistor supports a maximum collector-emitter voltage of 100 V and a collector-base voltage of 120 V. The emitter-base