JAN2N5794-Dual-Transistor by JAN – High-Speed Switching, TO-39 Metal Can Package

  • This dual-transistor device enables efficient signal amplification and switching in compact electronic circuits.
  • Featuring matched transistor pairs, it ensures consistent performance and improved linearity in analog applications.
  • The compact package design reduces board space, aiding in miniaturized and densely packed circuit layouts.
  • Ideal for audio preamplifiers and driver stages, it enhances signal integrity and overall system responsiveness.
  • Manufactured under controlled quality standards, it delivers reliable operation over extended use periods.
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JAN2N5794-Dual-Transistor Overview

The JAN2N5794 is a dual transistor device designed for high-reliability switching and amplification applications in military and industrial sectors. Featuring matched NPN transistor pairs in a single package, this component offers consistent electrical characteristics that enhance circuit performance and stability. Its rugged construction meets stringent military standards, ensuring dependable operation under harsh environmental conditions. Engineers and sourcing specialists rely on this dual transistor for precision analog circuits, signal processing, and low-noise amplification. The JAN2N5794??s balanced gain and tight parameter matching support optimized system integration. For more details, visit IC Manufacturer.

JAN2N5794-Dual-Transistor Technical Specifications

ParameterSpecification
Transistor TypeNPN Dual Transistor Pair
Collector-Emitter Voltage (VCEO)40 V
Collector Current (IC)100 mA
Power Dissipation625 mW
DC Current Gain (hFE)110 – 300
Transition Frequency (fT)100 MHz
Package TypeTO-99 Metal Can
Operating Temperature Range-55??C to +125??C
Matching ParameterLow VBE Offset Between Transistors

JAN2N5794-Dual-Transistor Key Features

  • Matched transistor pair: Ensures minimal offset voltage, improving precision in differential amplifiers and active load configurations.
  • High transition frequency (100 MHz): Supports high-speed switching and RF applications with low signal distortion.
  • Robust power dissipation rating (625 mW): Enables reliable operation in demanding thermal environments without performance degradation.
  • Military-grade construction: Guarantees long-term reliability and stability under extreme temperature and mechanical stress.

Typical Applications

  • Differential amplifiers in instrumentation and signal conditioning circuits, where matched transistor pairs reduce offset errors and improve accuracy.
  • High-frequency switching circuits requiring fast response and low noise characteristics.
  • Analog signal processing, including audio amplification stages demanding consistent gain and low distortion.
  • Military and aerospace electronics benefiting from rugged packaging and wide operating temperature capabilities.

JAN2N5794-Dual-Transistor Advantages vs Typical Alternatives

This dual transistor excels in providing matched electrical characteristics essential for precision analog circuits, outperforming typical discrete transistor pairs. Its military-grade packaging enhances reliability and thermal handling compared to standard commercial transistors. With superior gain matching and low offset voltage, it enables improved circuit accuracy and stability, making it ideal for high-performance industrial and defense applications.

JAN2N5794-Dual-Transistor Brand Info

The JAN prefix denotes a Joint Army-Navy (JAN) qualified device, adhering to rigorous military standards for quality and reliability. This transistor is manufactured by established semiconductor producers specializing in military and aerospace components. The TO-99 metal can package is a hallmark of durability and thermal efficiency, often used by trusted suppliers to ensure consistent performance in harsh environments. The JAN2N5794 has been a staple in defense electronics, recognized for its matched transistor pair design and strict quality control.

FAQ

What are the main benefits of using a matched dual transistor like this device?

Matched dual transistors provide closely aligned electrical parameters, such as gain and base-emitter voltage, which are critical for minimizing offset errors in differential amplifier circuits. This improves signal accuracy and overall system performance.

Can this transistor be used in high-frequency applications?

Yes, with a transition frequency of approximately 100 MHz, this device supports high-speed switching and RF circuits, making it suitable for applications requiring fast response and low signal distortion.

What operating temperature range does this device support?

The transistor is rated for operation between -55??C and +125??C, enabling reliable function in a broad range of industrial and military environmental conditions.

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How does the packaging affect the transistor??s performance?

The TO-99 metal can package provides excellent thermal conductivity and

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