JAN2N5793A-Dual-Transistor High-Speed Switching NPN Transistor, TO-220 Package

JAN2N5793A-Dual-Transistor Overview

The JAN2N5793A dual transistor is a high-performance semiconductor device designed for demanding electronic applications requiring reliable switching and amplification. Featuring matched NPN transistors in a single package, it enables precise control with improved thermal stability and reduced noise, making it ideal for analog signal processing and complementary circuit design. This device supports medium power and voltage applications, ensuring robust operation in industrial environments. Sourced from a trusted IC Manufacturer, it delivers consistent performance with enhanced electrical characteristics in a compact, durable TO-39 metal can package.

JAN2N5793A-Dual-Transistor Technical Specifications

JAN2N5793A-Dual-Transistor Key Features

• Matched Dual NPN Transistors: Ensures consistent gain and symmetrical performance for differential amplifier and push-pull output stages.
• High Voltage and Current Capability: Supports up to 60 V and 500 mA, enabling use in medium power circuits without compromise.
• Thermally Stable TO-39 Package: Provides excellent heat dissipation and mechanical stability under industrial operating conditions.
• Wide Operating Temperature Range: Suitable for harsh environments from -55??C to +125??C, ensuring reliability in industrial applications.

Typical Applications

• Precision analog signal amplification in instrumentation and measurement devices requiring matched transistor pairs.
• Push-pull output stages in audio amplifiers and driver circuits for balanced signal handling.
• Switching applications in power control circuits where reliable medium voltage and current handling are necessary.
• Complementary transistor configurations in industrial control systems demanding thermal stability and low noise.

JAN2N5793A-Dual-Transistor Advantages vs Typical Alternatives

This dual transistor offers superior matching and thermal stability compared to single discrete transistors, improving circuit accuracy and reducing noise. Its compact TO-39 metal can package enhances heat dissipation, extending device lifespan in industrial environments. The wide operating temperature range and medium power ratings make it a reliable choice over typical plastic-encapsulated transistors for robust, consistent performance in precision and power applications.

JAN2N5793A-Dual-Transistor Brand Info

The JAN2N5793A dual transistor is manufactured under military and industrial quality standards, commonly associated with legacy semiconductor suppliers specializing in high-reliability discrete components. It is typically produced by manufacturers known for meeting stringent defense and aerospace requirements, ensuring rigorous electrical and environmental testing. The product supports applications necessitating dependable performance and extended operating lifetimes, reflecting the brand??s commitment to quality and durability in critical electronic systems.

FAQ

What are the typical electrical characteristics of the JAN2N5793A dual transistor?

This device features a collector-emitter voltage rating of 60 V, collector current up to 500 mA, and a DC current gain ranging from 100 to 300. Its gain bandwidth product is approximately 100 MHz, making it suitable for medium frequency amplification and switching tasks.

In which package is the JAN2N5793A supplied, and why is it important?

The dual transistor comes in a TO-39 metal can package, which is critical for excellent thermal dissipation, mechanical strength, and reliable operation in industrial and military environments. This packaging supports extended temperature ranges and enhances device longevity.

Can this dual transistor operate reliably in harsh temperature conditions?

Yes, it supports an operating temperature range from -55??C to +125??C, enabling reliable use in a variety of industrial and aerospace applications where temperature extremes are common.

Application	Consumer Electronics, Industrial Automation, Telecommunications and Networking