JANS2N5666-Transistor Overview
The JANS2N5666 transistor is a high-performance NPN silicon transistor designed for military and industrial applications demanding robust switching and amplification capabilities. It features a high voltage rating and reliable operation under harsh conditions, making it suitable for use in precision analog circuits and power control systems. This transistor offers consistent gain and low noise characteristics, ensuring stable performance in sensitive electronics. Manufactured to stringent quality standards, it provides enhanced durability and thermal stability. For engineers and sourcing specialists seeking dependable transistor solutions, the JANS2N5666 delivers reliable switching with trusted semiconductor performance. Learn more at IC Manufacturer.
JANS2N5666-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Silicon Transistor |
| Collector-Emitter Voltage (Vceo) | 80 V |
| Collector-Base Voltage (Vcbo) | 100 V |
| Emitter-Base Voltage (Vebo) | 7 V |
| Collector Current (Ic) | 5 A (continuous) |
| DC Current Gain (hFE) | 40 to 160 (depending on Ic) |
| Transition Frequency (fT) | 8 MHz (typical) |
| Power Dissipation (Ptot) | 30 W |
| Operating Junction Temperature | -65??C to +200??C |
JANS2N5666-Transistor Key Features
- High voltage tolerance: Supports up to 100 V collector-base voltage, enabling reliable operation in high-voltage switching circuits.
- Robust current handling: Capable of continuous collector current up to 5 A, ensuring suitability for moderate power amplification tasks.
- Wide operating temperature range: Functions effectively from -65??C to +200??C, providing reliability in demanding military and industrial environments.
- Stable gain characteristics: Delivers consistent DC current gain from 40 to 160, facilitating precise signal amplification and control.
Typical Applications
- Military-grade amplification circuits requiring rugged transistor performance under extreme environmental conditions and high reliability.
- Power switching in industrial control systems where stable operation and high voltage tolerance are critical.
- Analog signal amplification in instrumentation and sensor interfaces demanding low noise and consistent gain.
- Driver stages in relay and solenoid control circuits benefiting from robust current capacity and voltage handling.
JANS2N5666-Transistor Advantages vs Typical Alternatives
This transistor provides superior voltage and current handling compared to typical low-power transistors, ensuring better reliability in high-stress applications. Its extended operating temperature range and military-grade qualification make it more durable in harsh environments. The consistent gain and low noise performance enhance signal integrity, distinguishing it from generic alternatives. Overall, it offers a balanced combination of robustness, precision, and thermal stability suited for demanding industrial and military designs.
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JANS2N5666-Transistor Brand Info
The JANS2N5666 is a military-specification transistor commonly manufactured by leading semiconductor suppliers specializing in defense-grade components. The “JAN” prefix denotes compliance with Joint Army-Navy standards, confirming its rugged design and qualification for use in defense and aerospace applications. This transistor is often sourced through authorized distributors who guarantee traceability and adherence to MIL-STD requirements. Its production follows strict quality controls to ensure long-term reliability and performance in critical systems.
FAQ
What is the maximum collector current rating for the JANS2N5666 transistor?
The transistor supports a continuous collector current of up to 5 amperes. This makes it suitable for moderate power switching and amplification tasks in both industrial and military-grade circuits.
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Can this transistor operate at high temperatures?
Yes, the device is rated for operating junction temperatures from -65??C to +200??C. This wide temperature range enables it to perform reliably in harsh environments, including aerospace and military applications.
What are the voltage limits for safe operation of this transistor?
The maximum collector-base voltage is 100 volts, while the collector-emitter voltage is rated at 80 volts. The emitter-base voltage limit is 7 volts, ensuring safe operation within these parameters to prevent breakdown.
