JAN2N5339U3-Transistor NPN Switching Transistor in TO-18 Metal Can Package ?C JAN Brand

JAN2N5339U3-Transistor Overview

The JAN2N5339U3 transistor is a high-performance bipolar junction transistor (BJT) designed for robust switching and amplification in demanding electronic circuits. Engineered to meet military-grade standards, it offers enhanced reliability and consistency under rigorous operating conditions. This transistor supports medium power applications with a focus on stable gain and low noise characteristics, making it suitable for precision industrial and defense electronics. Its construction ensures dependable operation across a wide temperature range, contributing to system durability. Available through IC Manufacturer, this device is optimized for engineers seeking trusted semiconductor components for critical applications.

JAN2N5339U3-Transistor Technical Specifications

JAN2N5339U3-Transistor Key Features

• Military-Grade Reliability: Built to meet stringent JAN standards ensuring stable performance in harsh environments, ideal for defense and aerospace applications.
• Wide Operating Temperature Range: Supports operation from -65??C to +200??C, providing versatility for extreme industrial conditions.
• High Gain Bandwidth Product: Delivers up to 100 MHz transition frequency, enabling efficient high-frequency switching and amplification.
• Robust Power Handling: Capable of dissipating 625 mW, suitable for medium power electronic circuits demanding reliable switching.

Typical Applications

• Signal amplification in military communication systems where stable gain and noise performance are critical for signal integrity.
• Switching components in industrial control equipment requiring rugged transistors that maintain performance over wide temperature ranges.
• High-frequency oscillator circuits in radar and avionics systems benefiting from the transistor??s high transition frequency.
• General-purpose amplification and switching in aerospace electronics, leveraging the device??s robust packaging and temperature resilience.

JAN2N5339U3-Transistor Advantages vs Typical Alternatives

This transistor??s military-grade qualification and extended temperature tolerance set it apart from standard commercial alternatives. Its reliable gain performance combined with a high transition frequency improves circuit efficiency and signal fidelity. Additionally, the robust TO-18 metal can package enhances thermal management and mechanical durability, providing superior longevity in industrial and defense applications compared to plastic-encapsulated devices.

JAN2N5339U3-Transistor Brand Info

The JAN2N5339U3 transistor is manufactured under strict Joint Army-Navy (JAN) specifications, ensuring top-tier quality for defense and aerospace sectors. Typically produced by established semiconductor companies specializing in military-grade components, this transistor adheres to rigorous testing protocols for electrical and environmental performance. The JAN marking denotes compliance with MIL-PRF-19500 standards, reflecting trusted heritage and reliability in critical electronic systems worldwide.

FAQ

What type of transistor is the JAN2N5339U3?

The device is an NPN bipolar junction transistor (BJT), designed for medium power amplification and switching applications, featuring military-grade specifications for enhanced reliability.

What is the maximum collector current rating for this transistor?

The maximum collector current is rated at 800 milliamps, making it suitable for moderate current applications in industrial and defense circuits.

What temperature range can the JAN2N5339U3 operate in?

This transistor supports a wide operating temperature range from -65??C to