JANSP2N2907AUB-Transistor Overview
The JANSP2N2907AUB is a robust PNP bipolar junction transistor designed for general-purpose amplification and switching applications. It delivers reliable performance with a maximum collector current of 600mA and a collector-emitter voltage rating up to 60V. Its medium power capabilities and versatile TO-18 metal can package make it suitable for a broad range of industrial and consumer electronic circuits. Engineers and sourcing specialists seeking a durable, efficient transistor for signal processing or power management will find this device a dependable choice. For further details, visit IC Manufacturer.
JANSP2N2907AUB-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | PNP Bipolar Junction Transistor |
| Maximum Collector-Emitter Voltage (VCEO) | 60 V |
| Maximum Collector Current (IC) | 600 mA |
| Power Dissipation (Ptot) | 625 mW |
| DC Current Gain (hFE) | 100 to 300 (typical range) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Package Type | TO-18 Metal Can |
| Operating Temperature Range | -65??C to +200??C |
JANSP2N2907AUB-Transistor Key Features
- High Current Capacity: Supports up to 600mA collector current, enabling effective control of medium power loads.
- Wide Voltage Handling: Collector-emitter voltage rating of 60V allows operation in various signal amplification and switching circuits.
- Reliable Metal Can Package: The TO-18 package ensures excellent thermal conductivity and mechanical durability for harsh environments.
- High Gain Performance: Typical current gain between 100 and 300 facilitates efficient amplification with minimal input drive.
Typical Applications
- Signal amplification in audio and low-frequency analog circuits, providing clean gain with moderate power handling capabilities.
- Switching devices in DC power supplies and relay driver circuits where reliable medium current switching is required.
- General-purpose transistor use in industrial control systems, enabling versatile functionality across different electronic modules.
- Temperature sensor interface circuits benefiting from the transistor??s stable characteristics over a wide temperature range.
JANSP2N2907AUB-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of power handling and gain in a reliable metal can package, distinguishing it from plastic-encapsulated alternatives. Its robust voltage and current ratings support versatile circuit designs, while the TO-18 package enhances thermal dissipation and mechanical stability. These factors contribute to improved longevity and performance consistency, making it a preferred choice for demanding industrial electronics.
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JANSP2N2907AUB-Transistor Brand Info
The JANSP2N2907AUB is manufactured by a reputable semiconductor producer known for high-quality discrete components. This transistor is part of a long-standing series recognized for durability and consistent electrical characteristics. The manufacturer adheres to stringent quality standards, ensuring each device meets industrial reliability criteria. This model is widely stocked and supported globally, facilitating easy sourcing for production and maintenance requirements.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current for this transistor is 600mA, allowing it to handle moderate power loads safely without compromising performance or reliability.
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Which package type does this transistor use and why is it important?
This transistor is housed in a TO-18 metal can package, which provides superior heat dissipation and mechanical protection compared to plastic packages, ideal for industrial and high-reliability applications.
What voltage levels can this transistor handle in collector-emitter configuration?
The transistor supports a maximum collector-emitter voltage of 60 volts, enabling it to operate effectively in circuits requiring moderate voltage amplification or switching.
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Is this device suitable for high-frequency applications?
Yes, with a transition frequency around 100 MHz, this transistor can be used in certain high-frequency applications, although it is primarily optimized for low to medium frequency amplification






