JANSM2N2907A-Transistor PNP Bipolar Junction Transistor – TO-18 Metal Can Package

  • This transistor amplifies or switches electronic signals, enabling precise control in various circuits.
  • Its gain parameter ensures efficient signal amplification, critical for maintaining signal integrity.
  • The compact package reduces board space, allowing for more efficient circuit layouts and easier integration.
  • Ideal for use in low-power amplification tasks, it helps improve signal clarity in audio or sensor applications.
  • Manufactured under strict quality standards to ensure stable performance and long-term reliability in devices.
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JANSM2N2907A-Transistor Overview

The JANSM2N2907A-Transistor is a high-quality PNP bipolar junction transistor designed for reliable switching and amplification in a variety of electronic circuits. Known for its robust performance under industrial conditions, it supports collector currents up to 600mA and collector-emitter voltages of 60V, making it suitable for medium-power applications. This transistor features a complementary configuration to the widely used 2N2222 NPN transistor, ensuring versatility in circuit design. Its stable gain and low noise characteristics enhance signal integrity and system efficiency. For detailed sourcing and additional product options, visit IC Manufacturer.

JANSM2N2907A-Transistor Technical Specifications

Parameter Specification
Type PNP Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 100 to 300 (varies by test conditions)
Transition Frequency (fT) 100 MHz (typical)
Package TO-18 Metal Can

JANSM2N2907A-Transistor Key Features

  • High Collector Current Capacity: Supports up to 600mA, enabling robust switching in medium-power circuits without thermal stress.
  • Wide Voltage Ratings: With a collector-emitter voltage up to 60V, it accommodates a broad range of operating conditions, enhancing circuit flexibility.
  • Stable DC Gain: Provides consistent current amplification (hFE between 100 and 300), improving signal fidelity and control in linear and switching applications.
  • Low Noise Performance: Ideal for amplification tasks where signal clarity is critical, reducing interference in sensitive electronic systems.

Typical Applications

  • Switching circuits in industrial control systems requiring reliable medium-power transistor operation under varied voltage and current loads.
  • Audio amplification stages where low noise and stable gain ensure high-quality sound signal processing.
  • General-purpose amplification in consumer and professional electronics, including signal processing and driver circuits.
  • Complementary push-pull output stages paired with NPN transistors for efficient power amplifier design.

JANSM2N2907A-Transistor Advantages vs Typical Alternatives

This transistor offers superior collector current capability and voltage ratings compared to many generic PNP transistors, ensuring enhanced reliability in demanding applications. Its stable gain and low noise characteristics translate to better signal accuracy and efficiency. Housed in a rugged TO-18 metal package, it provides improved thermal performance and durability, making it a preferred choice for industrial and professional electronic designs.

JANSM2N2907A-Transistor Brand Info

The JANSM2N2907A is a military-grade variant of the classic 2N2907A transistor, originally produced under the JAN (Joint Army-Navy) specification for high-reliability applications. This product adheres to stringent quality and testing protocols to meet defense and aerospace standards. Manufactured by specialized semiconductor suppliers, it is recognized for consistency, ruggedness, and long-term availability. Its legacy and proven performance make it a trusted component in both legacy and modern electronic systems requiring dependable bipolar transistor technology.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current rating is 600mA. This allows the transistor to handle moderate power levels in switching and amplification tasks without exceeding its thermal limits.

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