JANSD2N2907AL-Transistor PNP Amplifier Transistor in TO-18 Metal Can Package

  • This transistor amplifies or switches electronic signals, enhancing circuit control and efficiency.
  • Featuring a specific voltage or current rating, it ensures safe operation under expected electrical loads.
  • Its compact package reduces board space, facilitating integration into dense electronic assemblies.
  • Ideal for use in power regulation circuits, it supports stable voltage delivery in consumer devices.
  • Manufactured to meet standard quality controls, it offers dependable performance over extended use.
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JANSD2N2907AL-Transistor Overview

The JANSD2N2907AL is a high-performance PNP bipolar junction transistor designed for general-purpose amplification and switching applications. With a collector-emitter voltage rating of 60V and a collector current capacity of up to 600mA, this device offers reliable operation in medium power circuits. Its complementary design and well-balanced gain characteristics make it suitable for use in audio amplifiers, signal processing, and driver stages. Built to meet stringent military standards, the transistor ensures enhanced durability and consistent performance in demanding environments. For detailed technical resources and purchasing information, visit IC Manufacturer.

JANSD2N2907AL-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA
Power Dissipation (Ptot) 800 mW
DC Current Gain (hFE) 100 to 300 typical
Transition Frequency (fT) 100 MHz
Operating Temperature Range -65 to +200 ??C

JANSD2N2907AL-Transistor Key Features

  • High voltage and current handling: Supports up to 60V and 600mA, enabling robust switching and amplification in medium power circuits.
  • Wide operating temperature range: Functional from -65??C to +200??C, ensuring reliable performance in harsh and industrial environments.
  • Consistent DC gain: Gain range between 100 and 300 delivers stable amplification, beneficial for precision analog signal applications.
  • Fast switching characteristics: Transition frequency around 100MHz allows use in high-frequency signal processing and driver applications.

Typical Applications

  • Audio amplifier stages: Ideal for use in low to medium power audio amplification circuits requiring reliable gain and low distortion.
  • Signal switching and amplification in control circuits, providing robust performance in industrial automation systems.
  • Complementary transistor pairs in push-pull amplifier designs, enhancing linearity and efficiency.
  • Driver stages for relay and solenoid actuation, benefiting from the device??s high current and voltage ratings.

JANSD2N2907AL-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and extended temperature tolerance compared to many standard PNP transistors, making it well suited for demanding industrial and military applications. Its balanced gain and robust voltage/current ratings enable precise switching and amplification with reduced risk of thermal failure. These advantages make it a preferred choice over generic transistors lacking the rigorous qualification and performance consistency of this device.

JANSD2N2907AL-Transistor Brand Info

The JANSD2N2907AL is a military-grade PNP transistor manufactured by established semiconductor producers known for their stringent quality control and adherence to MIL-STD specifications. This transistor is part of a legacy product line originally designed for defense and aerospace applications, ensuring high reliability and long-term availability. It is widely recognized in the industry for its rugged construction and consistent electrical performance, making it a trusted component for engineers requiring dependable signal amplification and switching solutions.

FAQ

What distinguishes this PNP transistor from other general-purpose transistors?

This device is specially qualified for military standards, offering a wider operating temperature range and higher reliability than typical commercial transistors. It supports higher power dissipation and

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