JANSP2N2907A-Transistor Overview
The JANSP2N2907A is a high-performance PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This transistor offers reliable operation with moderate power dissipation and voltage ratings suited for industrial and commercial electronics. Its robust construction ensures stable gain and switching characteristics under a variety of operating conditions. Engineered for use in analog circuits, switching regulators, and low to medium power amplifier stages, it delivers dependable performance while maintaining efficient thermal management. For sourcing and detailed technical support, visit IC Manufacturer.
JANSP2N2907A-Transistor Technical Specifications
| Parameter | Value | Units |
|---|---|---|
| Transistor Type | PNP | ?C |
| Collector-Emitter Voltage (Vce) | 60 | V |
| Collector Current (Ic) | 600 | mA |
| Power Dissipation (Ptot) | 625 | mW |
| DC Current Gain (hFE) | 100?C300 | ?C |
| Transition Frequency (fT) | 100 | MHz |
| Junction Temperature (Tj) | 200 | ??C |
| Package Type | TO-18 Metal Can | ?C |
JANSP2N2907A-Transistor Key Features
- High current gain: Provides strong amplification ensuring effective signal processing in analog and switching circuits.
- Moderate voltage rating: Supports collector-emitter voltages up to 60 V, suitable for a wide range of power management applications.
- Robust TO-18 package: Metal can construction enhances thermal dissipation and mechanical durability, improving long-term reliability.
- Wide frequency response: Transition frequency of 100 MHz enables fast switching and high-frequency analog applications.
Typical Applications
- Signal amplification in audio and low-power analog circuits where stable gain and linearity are critical.
- Switching devices in industrial control systems requiring moderate voltage and current handling.
- Driver stages in relay and solenoid control circuits, offering efficient switching performance.
- General-purpose electronic designs demanding reliable, cost-effective PNP transistor solutions.
JANSP2N2907A-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of voltage rating, current capacity, and gain that distinguishes it from typical alternatives. Its metal can package ensures improved thermal management and mechanical stability compared to plastic encapsulated devices. The wide frequency response and robust current handling provide engineers with a reliable component that maintains consistent performance in switching and amplification tasks, enhancing both circuit reliability and longevity.
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JANSP2N2907A-Transistor Brand Info
The JANSP2N2907A is part of the JEDEC standard transistor family widely manufactured by semiconductor suppliers adhering to military and commercial quality standards. The “JAN” prefix indicates compliance with Joint Army-Navy specifications, ensuring enhanced reliability and ruggedness for demanding environments. This transistor is typically supplied by companies specializing in industrial-grade discrete semiconductors, offering guaranteed performance for aerospace, defense, and industrial applications.
FAQ
What type of transistor is the JANSP2N2907A and what are its basic uses?
The JANSP2N2907A is a PNP bipolar junction transistor commonly used for amplification and switching purposes. It is suitable for low to medium power analog circuits and switching applications where reliable gain and moderate power handling are required.
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What are the maximum voltage and current ratings for this transistor?
This transistor supports a maximum collector-emitter voltage of 60 volts and a collector current of up to 600 milliamps, making it suitable for a range of general-purpose electronic circuits.
How does the package type influence the transistor??s performance?
The TO-18 metal can package provides excellent thermal dissipation and mechanical protection, which contributes to improved device reliability and stable operation under elevated temperature conditions compared to plastic packages.
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What is the typical DC current gain (hFE) range of this transistor?
The device features a DC current gain ranging between 100





