JANSD2N5153-Transistor Overview
The JANSD2N5153 is a high-performance NPN bipolar junction transistor designed for switching and amplification applications in industrial electronics. Featuring a collector-emitter voltage rating suitable for medium voltage circuits and a moderate collector current capacity, it is optimized for reliable operation in demanding environments. The transistor??s low saturation voltage and fast switching characteristics enable efficient power management and signal control. Engineered to meet military and commercial standards, this device ensures durability and consistent performance across a variety of power electronics and control systems. For procurement and detailed technical support, visit IC Manufacturer.
JANSD2N5153-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector-Base Voltage (VCBO) | 80 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 1.5 A |
| Power Dissipation (Ptot) | 625 mW |
| DC Current Gain (hFE) | 40 to 100 (at IC=150 mA) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Package Type | TO-18 Metal Can |
JANSD2N5153-Transistor Key Features
- High Voltage Tolerance: Supports collector-emitter voltages up to 60 V, enabling use in medium voltage circuits without compromising reliability.
- Moderate Current Handling: Sustains collector currents up to 1.5 A, making it suitable for switching loads and amplification in control systems.
- Enhanced Gain Characteristics: Offers a DC current gain ranging from 40 to 100, ensuring effective signal amplification and reducing drive requirements.
- Fast Switching Performance: With a transition frequency around 100 MHz, it supports high-speed switching applications and improves overall system efficiency.
- Robust Packaging: Encapsulated in a TO-18 metal can package, providing superior thermal dissipation and mechanical protection, ideal for harsh industrial environments.
Typical Applications
- Used extensively in industrial control circuits requiring reliable medium voltage switching and amplification, such as motor drivers and relay interfaces.
- Power management systems benefit from its fast switching and low saturation voltage, enhancing energy efficiency and reducing heat generation.
- Signal amplification in audio and communication circuits where moderate gain and linearity are critical for maintaining signal integrity.
- General-purpose switching applications within embedded systems and instrumentation electronics, where ruggedness and consistent performance are essential.
JANSD2N5153-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of voltage rating and current capacity, outperforming many general-purpose transistors in medium power applications. Its robust metal can packaging ensures better thermal management and reliability under stress compared to plastic-encapsulated alternatives. The wide gain range and high transition frequency support higher efficiency and faster switching, making it a preferred choice for engineers seeking dependable performance in industrial and military-grade electronics.
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JANSD2N5153-Transistor Brand Info
The JANSD2N5153 is a product line commonly associated with military specification transistors originally manufactured by established semiconductor producers specializing in high-reliability components. These devices meet stringent JEDEC and MIL-STD standards, ensuring suitability for aerospace, defense, and industrial sectors where durability and performance consistency are paramount. The transistor is typically sourced through authorized distributors and trusted suppliers committed to maintaining quality and traceability standards.
FAQ
What is the maximum collector current rating for this transistor?
The maximum continuous collector current rating is 1.5 A,
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