JANSR2N5153L-Transistor Overview
The JANSR2N5153L-Transistor is a high-performance PNP bipolar junction transistor designed for reliable switching and amplification applications in industrial electronics. Offering a collector current rating of up to 600mA and a collector-emitter voltage of 60V, it supports medium-power operations with robust electrical characteristics. Its complementary low noise and gain properties make it suitable for precision analog circuits and general-purpose amplification. The device is packaged to meet stringent military and industrial standards, ensuring durability in harsh environments. For dependable sourcing and detailed product specifications, visit IC Manufacturer.
JANSR2N5153L-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | PNP Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vce) | 60 V |
| Collector Current (Ic) | 600 mA |
| Power Dissipation (Pc) | 800 mW |
| DC Current Gain (hFE) | Minimum 40 to Maximum 250 (varies by test conditions) |
| Transition Frequency (fT) | 80 MHz (typical) |
| Collector-Base Voltage (Vcb) | 60 V |
| Junction Temperature (Tj) | 150 ??C Maximum |
| Package Type | TO-39 Metal Can |
JANSR2N5153L-Transistor Key Features
- High Collector Current Capacity: Supports up to 600 mA, enabling efficient switching and amplification in medium power circuits.
- Wide Voltage Range: Collector-emitter voltage tolerance of 60 V provides versatility in diverse industrial environments.
- Robust Thermal Performance: Maximum junction temperature of 150??C enhances reliability under elevated operating conditions.
- Low Noise Operation: Suitable for use in low noise amplifier stages, improving signal clarity and system sensitivity.
- Standard TO-39 Package: Metal can packaging ensures durability and ease of mounting in industrial applications.
Typical Applications
- General-purpose amplification in analog signal processing circuits requiring medium power handling and moderate frequency response.
- Switching applications in control circuits where reliable on/off operation at currents up to 600 mA is necessary.
- Low noise preamplifier stages in audio or instrumentation systems to preserve signal integrity.
- Industrial and military-grade electronic assemblies demanding components with proven ruggedness and temperature tolerance.
JANSR2N5153L-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of moderate voltage and current ratings with robust thermal limits, making it well-suited for industrial-grade applications. Compared to typical general-purpose transistors, it provides enhanced reliability through its metal TO-39 package and military-standard qualification. The device??s low noise and good gain characteristics translate to improved accuracy and efficiency in amplification tasks, making it preferable over standard low-cost alternatives when performance and stability are critical.
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JANSR2N5153L-Transistor Brand Info
The JANSR2N5153L is a product conforming to JEDEC standards often associated with military and aerospace-grade semiconductor components. It is commonly manufactured by established semiconductor producers specializing in high-reliability discrete devices. This transistor variant is known for meeting rigorous screening and testing requirements, including enhanced temperature and electrical stress thresholds, making it a trusted choice in defense, aerospace, and industrial sectors. For sourcing, it is typically listed with authorized distributors serving these markets, reflecting its specialized application focus.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current for the device is 600 milliamperes (mA). This rating ensures the transistor can handle medium power loads safely in switching and amplification circuits without risk of damage under specified operating conditions.
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What voltage levels can the transistor withstand between collector and emitter?
The transistor has a maximum collector-emitter voltage rating of 60 volts. This voltage tolerance allows it to operate reliably in circuits with moderate voltage requirements, protecting it from breakdown during normal and transient conditions.
Is this transistor suitable for high-frequency applications?
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