JANTXV2N6051-Darlington Transistor, High Voltage Switching, TO-3 Package

  • Darlington transistor designed to amplify current, enabling control of high-power loads with low input signals.
  • Features a maximum voltage rating suitable for switching applications, ensuring safe operation within specified limits.
  • Compact package reduces board space requirements, facilitating efficient circuit design in tight layouts.
  • Ideal for motor control circuits where reliable switching enhances performance and system responsiveness.
  • Built to meet industry standards for durability and consistent electrical characteristics under varied conditions.
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JANTXV2N6051-Darlington Overview

The JANTXV2N6051-Darlington is a high-voltage, high-current Darlington transistor designed for demanding industrial and military applications requiring robust switching performance and reliable operation. Featuring a collector-emitter voltage rating of 100 V and a continuous collector current of 4 A, this device offers exceptional gain and fast switching capabilities. Its rugged construction complies with JAN (Joint Army-Navy) specifications, ensuring enhanced durability under harsh environmental conditions. This transistor is ideal for power amplification, switching loads, and interfacing with control circuits where stability and efficiency are critical. Available through IC Manufacturer, it supports engineers and sourcing specialists in high-reliability system designs.

JANTXV2N6051-Darlington Technical Specifications

Parameter Specification Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 120 V
Emitter-Base Voltage (VEBO) 5 V
Continuous Collector Current (IC) 4 A
Peak Collector Current (ICM) 8 A
Power Dissipation (PD) 115 W
DC Current Gain (hFE) 10000 min (typical)
Transition Frequency (fT) 4 MHz
Operating Junction Temperature (TJ) -65 to +200 ??C

JANTXV2N6051-Darlington Key Features

  • High current gain: Provides a minimum gain of 10,000, enabling efficient switching with minimal base drive current, reducing control circuit complexity and power consumption.
  • Robust voltage ratings: With collector-emitter voltage up to 100 V and collector-base voltage at 120 V, it handles high-voltage loads effectively, ensuring durability in industrial environments.
  • High power dissipation capability: Supports up to 115 W, allowing the device to manage significant thermal loads without compromising reliability or performance.
  • Military-grade construction: Designed to meet JAN standards, this transistor delivers consistent operation under extreme temperature ranges (-65??C to +200??C) and harsh conditions.

Typical Applications

  • Power switching and amplification in industrial control systems where high voltage and current handling are critical for driving motors or solenoids.
  • Interface devices in military and aerospace electronics requiring rugged, reliable transistor operation under strict environmental conditions.
  • High-gain preamplifier stages in signal processing circuits demanding low drive current and stable operation.
  • Load driving components in automated manufacturing equipment, enhancing switching efficiency and durability.

JANTXV2N6051-Darlington Advantages vs Typical Alternatives

This Darlington transistor offers superior current gain and voltage handling compared to typical discrete transistors, enabling more efficient switching with less input drive. Its military-grade JAN certification ensures higher reliability and wider temperature operation than consumer-grade alternatives. The robust power dissipation rating supports heavy-duty applications, reducing thermal management requirements and improving system longevity. Overall, it provides a dependable, high-performance solution for power amplification and switching in demanding industrial and defense environments.

JANTXV2N6051-Darlington Brand Info

The JANTXV2N6051-Darlington is part of the JAN (Joint Army-Navy) series of transistors, which are produced under stringent military standards to ensure reliability and performance in critical applications. These devices are

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