MV2N4857UB-JFET-NChannel N-Channel JFET Transistor in TO-92 Package by ON Semiconductor

  • This JFET N-Channel transistor enables precise current control, improving circuit stability and performance.
  • Low gate leakage current reduces interference, enhancing signal integrity in sensitive electronic applications.
  • The compact package design supports efficient board layout, saving space in dense electronic assemblies.
  • Ideal for use in low-noise amplifiers where minimizing distortion is critical for clear signal processing.
  • Manufactured under strict quality controls to ensure consistent operation and long-term reliability.
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MV2N4857UB-JFET-NChannel Overview

The MV2N4857UB-JFET-NChannel is a high-performance N-Channel JFET designed for precision analog switching and low-noise amplification applications. This device features a low input capacitance and minimal leakage current, making it ideal for sensitive signal processing tasks. Its robust design supports reliable operation in demanding industrial environments, ensuring consistent performance. Engineers and sourcing specialists benefit from its compact packaging and compatibility with standard circuit layouts. For detailed product sourcing and technical support, visit IC Manufacturer.

MV2N4857UB-JFET-NChannel Technical Specifications

ParameterSpecification
Device TypeN-Channel Junction Field Effect Transistor (JFET)
Drain-Source Voltage (VDS)??30 V
Gate-Source Cutoff Voltage (VGS(off))?C2 V to ?C6 V
Drain Current (IDSS)5 mA min, 12 mA max
Input Capacitance (Ciss)3 pF typical
Gate Leakage Current (IGSS)??10 pA max
Power Dissipation (PD)400 mW
Operating Temperature Range?C55 ??C to +125 ??C
Package TypeTO-92

MV2N4857UB-JFET-NChannel Key Features

  • Low Noise Operation: The device offers minimal noise contribution, enhancing signal integrity in sensitive analog circuits.
  • High Input Impedance: With extremely low gate leakage, it preserves signal sources, crucial for precision measurement applications.
  • Wide Voltage Range: Supports drain-source voltages up to ??30 V, providing flexibility across various industrial and instrumentation designs.
  • Compact TO-92 Package: Facilitates easy integration into existing PCB layouts, supporting efficient space utilization.

Typical Applications

  • Analog switch circuits where low distortion and high input impedance are essential for accurate signal routing and amplification.
  • Low-noise preamplifiers used in audio and instrumentation to maintain signal clarity at very low signal levels.
  • Voltage-controlled resistors in analog synthesizers and signal processing equipment requiring precise control.
  • High-impedance buffer stages in sensor interfaces to prevent loading effects and preserve sensor output fidelity.

MV2N4857UB-JFET-NChannel Advantages vs Typical Alternatives

This JFET offers superior low-noise performance and high input impedance compared to typical MOSFET or bipolar transistor alternatives, resulting in improved signal fidelity. Its low gate leakage ensures minimal signal distortion, making it ideal for precision analog circuits. Additionally, the device??s robust voltage rating and compact packaging provide enhanced reliability and ease of integration in industrial designs.

MV2N4857UB-JFET-NChannel Brand Info

The MV2N4857UB-JFET-NChannel is produced by IC Manufacturer, a leading supplier in semiconductor components specializing in high-quality discrete devices for industrial and instrumentation markets. Known for stringent quality control and reliable performance, the brand supports engineers with comprehensive datasheets and technical resources to facilitate system design and component selection.

FAQ

What is the maximum drain-source voltage rating for this N-Channel JFET?

The maximum drain-source voltage (VDS) rating for this device is ??30 volts, allowing it to operate safely within a broad voltage range typical of many analog and industrial applications.

How does the low gate leakage current benefit circuit performance?

Low gate leakage current, typically ??10 picoamperes, ensures minimal loading on signal sources. This feature is critical in high-impedance circuits where

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