JANKCAM2N2369A-Transistor-Die Overview
The JANKCAM2N2369A-Transistor-Die is a high-performance NPN bipolar junction transistor die designed for amplification and switching applications. Engineered with precise semiconductor fabrication techniques, this transistor die exhibits reliable electrical characteristics including a maximum collector current suitable for medium power applications. Its compact die format enables integration into custom semiconductor packages or hybrid circuits. The device??s robust breakdown voltages and gain properties make it a versatile solution for various industrial and electronic designs. For detailed sourcing and technical support, visit the IC Manufacturer website.
JANKCAM2N2369A-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor (BJT) Die |
| Maximum Collector-Emitter Voltage (Vceo) | 60 V |
| Maximum Collector Current (Ic) | 0.8 A |
| Power Dissipation (Pd) | 0.8 W (die level) |
| Gain Bandwidth Product (fT) | 100 MHz (typical) |
| DC Current Gain (hFE) | 100 to 300 (typical) |
| Collector-Base Breakdown Voltage (Vcbo) | 60 V |
| Emitter-Base Breakdown Voltage (Vebo) | 5 V |
| Package Type | Unpackaged Semiconductor Die |
JANKCAM2N2369A-Transistor-Die Key Features
- High Gain Efficiency: Offers a DC current gain ranging from 100 to 300, enabling effective signal amplification in medium power applications.
- Robust Voltage Ratings: Supports collector-emitter voltages up to 60 V, providing flexibility for diverse circuit voltage requirements.
- Compact Die Format: Allows seamless integration into custom semiconductor packages or hybrid modules, optimizing space and design versatility.
- Wide Frequency Response: Typical gain bandwidth product of 100 MHz enables operation in moderate frequency applications, ensuring reliable switching and amplification.
Typical Applications
- General purpose amplification circuits in industrial electronics requiring moderate current and voltage handling capabilities.
- Switching applications where reliable medium power transistor dies are needed for custom package assembly.
- Driver stages in analog circuits demanding stable gain and frequency response.
- Integration into hybrid circuits or multi-chip modules for compact industrial sensor or control systems.
JANKCAM2N2369A-Transistor-Die Advantages vs Typical Alternatives
This transistor die provides a competitive edge over typical discrete transistors by offering high gain and voltage handling in a compact, unpackaged format. The die??s reliable breakdown voltages and consistent current gain enable precise control in amplification and switching tasks. Compared to packaged transistors, it allows for customized integration, improving thermal management and circuit miniaturization without compromising performance or reliability.
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JANKCAM2N2369A-Transistor-Die Brand Info
The JANKCAM2N2369A transistor die is produced by JANKCAM Semiconductor, a manufacturer specializing in high-quality discrete transistor dies for industrial and electronics OEM applications. The company focuses on delivering robust, precision-engineered semiconductor components that meet rigorous performance and reliability standards. Their product portfolio includes transistor dies tailored for amplification, switching, and hybrid module integration, supporting diverse sectors such as industrial automation, instrumentation, and communications.
FAQ
What is the maximum collector current rating for this transistor die?
The maximum collector current rating is 0.8 A. This rating defines the highest continuous current the transistor die can safely handle without damage under specified operating conditions.
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Can this transistor die be used for high-frequency applications?
Yes, the transistor die has a typical gain bandwidth product of around 100 MHz, making it suitable for moderate frequency amplification and switching applications, though it is not intended for ultra-high-frequency RF designs.
Is the transistor provided in a packaged form?
No, this product is supplied as an unpackaged semiconductor die. It requires integration into a custom package or hybrid circuit by the end user or assembly house.
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What are the key electrical breakdown voltage ratings of this transistor die?
The main breakdown
