JANS2N3507-Transistor Overview
The JANS2N3507 is a high-reliability PNP bipolar junction transistor designed for demanding industrial and aerospace applications. It offers robust electrical performance with a maximum collector-emitter voltage of 60V and collector current up to 2A, ensuring reliable operation in power amplification and switching tasks. Its hermetically sealed metal can package provides enhanced durability and stability in harsh environments. Engineers and sourcing specialists will find this transistor ideal where precision, longevity, and ruggedness are essential. For detailed specifications and purchasing, visit the IC Manufacturer website.
JANS2N3507-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Polarity | PNP |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector-Base Voltage (VCBO) | 60 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 2 A |
| Power Dissipation (Ptot) | 12.5 W |
| DC Current Gain (hFE) | 40 to 160 |
| Transition Frequency (fT) | 4 MHz |
| Package | TO-18 Metal Can |
JANS2N3507-Transistor Key Features
- High Voltage Capability: Supports up to 60V collector-emitter voltage, enabling usage in medium-power switching and amplification.
- Robust Collector Current: Handles up to 2A collector current, providing flexibility for power control applications.
- Wide Gain Range: DC current gain between 40 and 160 ensures adaptability for signal amplification with precision control.
- Hermetic Metal Can Package: Enhances device reliability and thermal performance in extreme environmental conditions.
- Moderate Transition Frequency: Operating frequency around 4 MHz allows for moderate-speed switching and amplification tasks.
- Thermal Dissipation: 12.5 W power dissipation supports continuous operation under significant load without degradation.
Typical Applications
- Power Amplification: Suitable for use in linear amplifier stages where medium voltage and current are required for driving loads.
- Switching Circuits: Ideal for industrial control systems that require reliable transistor switching under elevated power conditions.
- Signal Processing: Supports moderate-frequency analog signal amplification in instrumentation and communication systems.
- Military and Aerospace Electronics: Hermetic packaging and robust electrical characteristics make it suitable for high-reliability defense electronics.
JANS2N3507-Transistor Advantages vs Typical Alternatives
This transistor provides a robust combination of voltage and current handling capabilities in a hermetic metal package, distinguishing it from many plastic-encapsulated alternatives. It offers enhanced reliability in harsh environments due to its sealed construction, making it ideal for aerospace and industrial applications where longevity and stable performance are critical. Additionally, its wide current gain range and moderate transition frequency enable precise amplification and switching, outperforming typical general-purpose transistors in demanding scenarios.
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JANS2N3507-Transistor Brand Info
The JANS2N3507 is a military-grade transistor variant adhering to JAN (Joint Army-Navy) specifications, known for stringent quality and reliability standards. Originally utilized in aerospace and defense sectors, this device is produced under controlled manufacturing processes to meet harsh operational conditions. Its legacy and design align with high-reliability semiconductor brands focused on robust discrete components for industrial and military electronics. The metal can TO-18 package is typical of devices designed for long-term stable performance under temperature and mechanical stress.
FAQ
What types of circuits is the JANS2N3507 best suited for?
The transistor excels in medium
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