JANS2N3507AL-Transistor Overview
The JANS2N3507AL is a high-reliability PNP bipolar junction transistor designed for industrial and military-grade applications. It offers robust electrical performance, including a maximum collector current of 0.5A and a collector-emitter voltage rating of 60V, suitable for amplification and switching tasks. This transistor??s hermetically sealed TO-18 metal can package ensures long-term stability and superior thermal characteristics, making it ideal for demanding environments. Its consistent gain and low leakage currents support precise analog signal control in critical systems. Available through IC Manufacturer, it meets stringent quality standards for aerospace, defense, and industrial electronics.
JANS2N3507AL-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | PNP Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vceo) | 60 V |
| Collector-Base Voltage (Vcbo) | 60 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 0.5 A (max) |
| Gain Bandwidth Product (fT) | ??15 MHz |
| DC Current Gain (hFE) | 40 to 250 (varies by test conditions) |
| Power Dissipation (Pc) | 500 mW |
| Package | Hermetically sealed TO-18 metal can |
| Operating Temperature Range | -55??C to +125??C |
JANS2N3507AL-Transistor Key Features
- Hermetic TO-18 Package: Ensures environmental protection and long-term reliability in harsh industrial and military conditions.
- High Voltage Handling: With a collector-emitter voltage rating up to 60V, it supports moderate power switching and amplification with safety margin.
- Stable DC Gain: The transistor offers a consistent current gain across temperature ranges, critical for analog signal fidelity.
- Low Leakage Current: Minimizes power loss and enhances efficiency in precision circuits.
Typical Applications
- Industrial control systems requiring rugged transistors for signal amplification and switching under varying environmental conditions.
- Military and aerospace electronics where hermetic packaging and reliability are mandatory for mission-critical functionality.
- Analog signal processing circuits needing stable gain and low noise performance for sensor interface or communication modules.
- Power management modules that demand efficient switching with moderate current and voltage handling capacity.
JANS2N3507AL-Transistor Advantages vs Typical Alternatives
This transistor excels in applications requiring enhanced reliability and environmental resistance compared to standard plastic-encapsulated transistors. Its hermetically sealed metal can package provides superior protection against moisture and contaminants, improving lifespan and stability. The broad operating temperature range and consistent gain also make it preferable for precision analog and switching circuits where accuracy and thermal tolerance are critical.
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JANS2N3507AL-Transistor Brand Info
The JANS2N3507AL is a military-grade transistor originally standardized under the JAN (Joint Army-Navy) designation, indicating compliance with strict defense industry quality and reliability standards. Typically manufactured by established semiconductor suppliers specializing in high-reliability discrete components, it caters to aerospace, defense, and industrial sectors. The device is widely recognized for its rugged TO-18 metal can packaging and stringent testing to meet MIL-PRF-19500 specifications, making it a trusted choice for critical applications.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current for the JANS2N3507AL transistor is 0.5 amperes, which allows it to handle moderate power loads in switching and amplification circuits without exceeding safe operating limits.
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What package type does this transistor use, and why is it important?
This device uses a hermetically sealed TO-18 metal can package, which provides excellent protection against moisture, dust, and mechanical stress. This packaging enhances reliability and longevity, especially in harsh environments typical of military and aerospace applications.
Can this transistor be used in high-frequency applications?
With a gain bandwidth product (f







