2N5671-Transistor by ON Semiconductor – NPN Transistor, TO-18 Metal Can Package

2N5671-Transistor Overview

The 2N5671 is a high-performance NPN bipolar junction transistor designed for medium power and high gain applications. With a collector current rating of up to 600 mA and a collector-emitter voltage of 60 V, this transistor is well suited for amplification and switching tasks in industrial and consumer electronics. Its complementary characteristics enable efficient operation in both linear and switching modes, making it a reliable component for audio amplification, driver stages, and general purpose circuits. Manufactured to meet stringent quality standards, the 2N5671 ensures stable electrical performance and long-term reliability. For sourcing and technical details, visit IC Manufacturer.

2N5671-Transistor Key Features

• High collector current capability: Supports up to 600 mA, enabling robust handling of medium power loads without compromising performance.
• Collector-emitter voltage rating of 60 V: Allows operation in circuits with moderate voltage requirements, providing design flexibility.
• High current gain (hFE): Ensures improved amplification efficiency, reducing the need for additional gain stages and simplifying circuit design.
• Low transition frequency (fT) around 30 MHz: Suitable for medium-frequency applications such as audio and signal amplification while maintaining signal integrity.

2N5671-Transistor Technical Specifications

2N5671-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of current handling and voltage rating, making it an ideal choice over typical alternatives with lower current limits or voltage ratings. Its high current gain improves amplification efficiency and reduces power consumption in driver circuits. Additionally, the rugged TO-18 metal package enhances thermal dissipation and reliability, outperforming plastic-encapsulated equivalents in demanding environments.

Typical Applications

• Audio amplifier stages where medium power and high gain are required, ensuring clear sound reproduction and stable operation.
• Switching circuits in industrial control systems, allowing reliable switching of loads up to 600 mA.
• Driver stages for relay and solenoid control, benefiting from the transistor??s current capacity and voltage ratings.
• General-purpose amplification in signal processing circuits, providing flexibility in various electronic designs.

2N5671-Transistor Brand Info

The 2N5671 transistor is a widely recognized component produced by leading semiconductor manufacturers known for reliability and performance consistency. Its legacy in industrial and consumer electronics underscores its trusted status among engineers and sourcing specialists. The product benefits from stringent manufacturing controls and quality assurance processes, ensuring it meets or exceeds industry standards for bipolar junction transistors in its class.

FAQ

What is the maximum collector current rating for the 2N5671 transistor?

The transistor is rated for a maximum collector current of 600 mA, allowing it to handle medium power loads in amplification and switching applications without risk of damage or performance degradation.

Can the 2N5671 transistor be used in high-frequency applications?

With a transition frequency (fT) of approximately 30 MHz, this device is suitable for medium-frequency applications such as audio and signal amplification but is not intended for very high-frequency RF circuits.

What package type does the 2N5671 come in, and how does it affect performance?

This transistor is housed in a TO-18 metal can package, which provides enhanced thermal dissipation and mechanical protection compared to plastic packages, improving reliability in demanding operating conditions.

What voltage ratings should be considered when designing circuits with this transistor?

The device supports a collector-emitter voltage of 60 V and a collector-base voltage of 80 V, enabling its use in circuits with moderate voltage levels while maintaining safe operation margins.

How does the current gain of the 2N5671 affect circuit design?

The transistor offers a DC current gain (hFE) ranging from 40 to 320, which allows for flexible amplification performance. A higher gain means fewer additional amplification stages are necessary, simplifying circuit complexity and improving efficiency.