2N3715-Transistor NPN Power Amplifier | ON Semiconductor TO-66 Package

  • This transistor amplifies electrical signals, enabling efficient control of current in various circuits.
  • Its voltage rating supports stable operation under typical load conditions, ensuring consistent performance.
  • The compact package design allows for board-space savings in densely packed electronic assemblies.
  • Ideal for switching applications, it enhances circuit responsiveness and energy efficiency in device control.
  • Manufactured to meet industry standards, it offers dependable operation over extended usage periods.
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2N3715-Transistor Overview

The 2N3715 transistor is a high-performance NPN silicon transistor designed primarily for amplification and switching applications in industrial electronics. Featuring a robust collector current capability and reliable gain characteristics, this device is suited for medium-power circuits requiring efficient signal handling and thermal stability. Its construction supports a maximum collector-emitter voltage suitable for moderate voltage applications, making it an excellent choice for analog and digital interface designs. Engineers and sourcing specialists will appreciate the consistent electrical parameters, ensuring dependable operation across a variety of industrial environments. For precise component sourcing, refer to IC Manufacturer.

2N3715-Transistor Key Features

  • High collector current capability: Supports up to 4A collector current, enabling robust power handling in switching and amplifier circuits.
  • Moderate voltage rating: Collector-emitter voltage up to 60V allows for versatility in medium-voltage industrial applications.
  • Reliable gain performance: Maintains stable current gain (hFE) across recommended operating conditions, ensuring signal integrity.
  • Thermal stability: Designed to operate efficiently in environments with elevated temperatures, enhancing device longevity.

2N3715-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Silicon
Collector-Emitter Voltage (Vceo) 60 V
Collector Current (Ic) 4 A (max)
Power Dissipation (Pd) 30 W (max)
Current Gain (hFE) 40 to 160 (depending on Ic and conditions)
Transition Frequency (fT) ??50 MHz
Junction Temperature (Tj) 150 ??C (max)
Package Type TO-18 Metal Can

2N3715-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of moderate voltage rating and high current capability, which sets it apart from typical low-power or high-voltage alternatives. Its stable gain and thermal endurance provide engineers with a reliable component for demanding switching and amplification tasks. Compared to similar devices, it delivers enhanced power handling and frequency response, optimizing circuit performance without compromising durability.

Typical Applications

  • Power amplification stages in analog signal processing, where moderate voltage and high current handling are required for efficient signal gain.
  • Switching regulators and power control circuits, benefiting from the transistor??s robust current capacity and thermal stability.
  • Industrial automation interfaces, using the device for reliable switching under varied load conditions.
  • Driver stages in relay and solenoid control circuits, leveraging the transistor??s fast response and power rating.

2N3715-Transistor Brand Info

The 2N3715 transistor is a widely recognized component in the semiconductor industry, produced by multiple established manufacturers adhering to stringent quality standards. Its legacy as a dependable medium-power transistor continues to make it a preferred choice in industrial electronics design. The device is typically offered in the TO-18 metal can package, which ensures excellent thermal dissipation and mechanical robustness, suitable for harsh operating environments.

FAQ

What is the maximum collector current supported by this transistor?

The maximum collector current rating for this transistor is 4 amperes, which allows it to handle moderate power loads in switching and amplification circuits without performance degradation.

Can this transistor operate at high frequencies?

Yes, with a transition frequency of approximately 50 MHz or greater, this transistor is capable of handling high-frequency applications such as RF amplification and fast switching tasks.

What package type does this transistor come in, and why is it important?

This device is typically housed in a TO-18 metal can package, which offers superior thermal dissipation and mechanical protection, making it suitable for use in demanding industrial environments.

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产品中间询盘

Is this transistor suitable for high-temperature applications?

It is rated to operate with a maximum junction temperature of 150 ??C, indicating it can perform reliably in elevated temperature conditions commonly found in industrial settings.

How does the current gain vary with operating conditions?

The current gain (hFE) ranges between 40 and 160 depending on collector current and temperature, ensuring stable amplification across typical operating ranges for industrial electronics.

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