JANTX2N3716-Transistor by JAN ?C High-Power NPN Transistor in TO-220 Package

  • This transistor amplifies electrical signals, enabling efficient switching and signal control in circuits.
  • It supports high voltage operation, ensuring stable performance under demanding electrical conditions.
  • The compact package design allows for easier integration and saves valuable board space in tight layouts.
  • Ideal for use in power regulation modules, it enhances circuit stability and responsiveness in real-time applications.
  • Manufactured to meet strict quality standards, this component assures long-term reliability in electronic assemblies.
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JANTX2N3716-Transistor Overview

The JANTX2N3716 is a high-performance NPN silicon transistor designed for military and aerospace applications where durability and reliability are paramount. Featuring a robust collector current rating and a junction temperature capable of withstanding harsh operating environments, this transistor offers consistent switching and amplification performance. Its hermetically sealed metal can package ensures excellent thermal stability and protection against environmental contaminants. Ideal for precision analog circuits and power switching, this device meets stringent quality standards, making it a preferred choice for engineers and sourcing specialists seeking dependable semiconductor components. For detailed sourcing and technical support, visit IC Manufacturer.

JANTX2N3716-Transistor Key Features

  • High collector current capacity: Supports up to 1.5A continuous collector current, enabling effective power handling in demanding circuits.
  • Wide voltage ratings: Collector-emitter voltage up to 60V ensures suitability for medium power applications and voltage tolerance.
  • Hermetically sealed TO-39 metal can package: Provides superior environmental protection and thermal dissipation, enhancing device reliability.
  • High transition frequency (fT): Ensures efficient high-frequency amplification and switching performance up to 40 MHz.
  • Low power dissipation: Maximum power dissipation of 1W supports efficient thermal management in compact designs.
  • Military-grade quality: Complies with JAN (Joint Army-Navy) standards for ruggedness and long-term operational stability.
  • Complementary device availability: Compatible with various complementary transistors, simplifying design integration in push-pull stages.

JANTX2N3716-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Silicon
Collector-Emitter Voltage (Vceo) 60 V
Collector-Base Voltage (Vcbo) 75 V
Emitter-Base Voltage (Vebo) 5 V
Collector Current (Ic) 1.5 A
Power Dissipation (Ptot) 1 W
Transition Frequency (fT) 40 MHz
DC Current Gain (hFE) 40 to 160 (varies with test conditions)
Operating Junction Temperature (Tj) -65??C to +200??C
Package Type TO-39 Hermetic Metal Can

JANTX2N3716-Transistor Advantages vs Typical Alternatives

This transistor??s military-grade construction and hermetic packaging provide enhanced reliability and stability compared to commercial-grade alternatives. Its higher collector current and voltage ratings deliver greater power handling capacity, while the wide operating temperature range supports performance in extreme environments. The combination of high transition frequency and low power dissipation makes it well-suited for efficient switching and amplification tasks, offering engineers a robust solution with proven endurance and precision.

Typical Applications

  • High-reliability analog amplification circuits in aerospace and defense systems, where consistent gain and ruggedness are critical.
  • Switching components in power control units requiring stable operation at elevated temperatures.
  • Military communication equipment demanding components that meet stringent environmental and electrical standards.
  • Precision sensor interface circuits benefiting from low noise and stable frequency response.

JANTX2N3716-Transistor Brand Info

The JANTX2N3716 is part of a series of transistors manufactured to meet Joint Army-Navy (JAN) specifications, ensuring rigorous quality and reliability for defense-related applications. This product is recognized for its hermetically sealed TO-39 metal can package, which protects the semiconductor die from moisture and mechanical stress. Designed for use in mission-critical environments, the transistor is supported by a strong legacy of military-grade semiconductor manufacturing, providing sourcing specialists and engineers with confidence in performance consistency and lifecycle longevity.

FAQ

What is the maximum collector current rating of this transistor?

The transistor supports a maximum continuous collector current of 1.5 amperes, allowing it to handle medium power applications reliably without thermal overload when within specified conditions.

What type of package does the transistor use and why is it important?

This device comes in a hermetically sealed TO-39 metal can package, which is crucial for protecting the transistor from environmental contaminants and enhancing thermal dissipation, thereby ensuring long-term reliability in harsh operating environments.

Can this transistor operate at high frequencies?

Yes, the transistor features a transition frequency (fT) of approximately 40 MHz, making it suitable for high-frequency amplification and switching scenarios typical in advanced analog and digital circuits.

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What temperature ranges can the transistor safely operate within?

It is rated for an operating junction temperature from -65??C up to +200??C, supporting use in extreme thermal conditions commonly encountered in military and aerospace applications.

How does this transistor compare to commercial-grade alternatives?

Compared to commercial-grade transistors, this model offers enhanced durability, higher voltage and current ratings, and a package designed for hermetic sealing, resulting in superior performance in demanding and mission-critical environments.

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