JANTXV2N3810-Dual-Transistor by JAN – High-Speed Switching, TO-92 Package

  • This dual transistor enables efficient signal amplification, improving circuit performance in various electronic designs.
  • Its voltage rating supports stable operation under typical load conditions, ensuring consistent functionality.
  • The compact package reduces board space, facilitating integration into tight layouts and compact devices.
  • Ideal for switching applications, it helps manage current flow effectively in control circuits and power management.
  • Manufactured with strict quality standards, it offers reliable operation and long-term durability in demanding environments.
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JANTXV2N3810-Dual-Transistor Overview

The JANTXV2N3810-Dual-Transistor is a high-performance silicon NPN transistor designed for aerospace and military-grade applications, offering enhanced reliability and precision. Featuring dual transistor pairs in a single package, it enables compact circuit designs and reduces component count. This device supports high gain and low noise operation, making it suitable for high-frequency amplification and switching tasks. Its robust construction ensures stable performance under harsh environmental conditions, meeting stringent military specifications. For engineers and sourcing specialists seeking trusted semiconductor solutions, the JANTXV2N3810-Dual-Transistor offers a reliable, space-saving option from IC Manufacturer.

JANTXV2N3810-Dual-Transistor Key Features

  • Dual transistor configuration: Integrates two matched NPN transistors in one package, simplifying circuit layout and improving signal matching.
  • High current gain (hFE): Ensures efficient amplification, reducing the need for additional gain stages in complex designs.
  • Military-grade reliability: Tested to stringent JAN (Joint Army-Navy) standards for durability and consistent operation in extreme conditions.
  • Wide frequency response: Supports applications requiring high-frequency switching and amplification up to several hundred megahertz.

JANTXV2N3810-Dual-Transistor Technical Specifications

ParameterValueUnits
Transistor TypeNPN Dual?C
Collector-Emitter Voltage (VCEO)100V
Collector Current (IC)0.8A
Power Dissipation (Ptot)1.0W
Current Gain (hFE)50 to 300?C
Transition Frequency (fT)200MHz
Operating Temperature Range-55 to +125??C
Package TypeTO-71 Metal Can?C

JANTXV2N3810-Dual-Transistor Advantages vs Typical Alternatives

This dual transistor device excels in providing enhanced integration and matched transistor pairs, reducing design complexity compared to discrete alternatives. Its military-grade qualification ensures higher reliability and stable gain across temperature extremes, outperforming commercial-grade transistors. The compact TO-71 package also aids in efficient thermal management and reduces board space, offering a practical advantage in aerospace and defense applications.

Typical Applications

  • High-frequency amplification circuits in aerospace communication systems, where low noise and stable gain are critical for signal integrity.
  • Switching applications requiring matched transistor pairs for precise timing control and reduced signal distortion.
  • Military and defense electronic equipment demanding rugged components with proven reliability under harsh environmental conditions.
  • Test and measurement instrumentation benefiting from robust transistor characteristics and consistent performance over temperature.

JANTXV2N3810-Dual-Transistor Brand Info

The JANTXV2N3810-Dual-Transistor is manufactured under strict quality controls aligned with military standards, ensuring top-tier reliability and performance. This product is part of a trusted line of JAN series transistors known for their rugged metal can packaging and consistent electrical characteristics. Designed for engineers who require dependable semiconductor devices for critical applications, this transistor blends proven technology with stringent testing protocols to meet demanding industrial and military requirements.

FAQ

What is the maximum collector current supported by this dual transistor?

The device supports a maximum continuous collector current of 0.8 amperes per transistor, ensuring it can handle moderate power amplification and switching tasks without compromising reliability.

How does the transition frequency impact its application?

The transition frequency of 200 MHz indicates the transistor??s suitability for high-frequency applications, such as RF amplification and fast switching circuits, making it ideal for aerospace and communication systems.

What temperature range can this transistor operate within?

This transistor is rated for operation from -55??C to +125??C, which allows it to perform reliably in extreme environmental conditions typical of military and aerospace applications.

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What package type does the transistor come in, and why is it important?

It is housed in a TO-71 metal can package, which provides excellent thermal dissipation and mechanical protection, essential for maintaining performance and longevity in harsh operating environments.

Why choose a dual transistor over two separate single transistors in a design?

Using a dual transistor ensures matched device characteristics, improves circuit symmetry, reduces board space, and simplifies assembly, which collectively enhance overall system reliability and performance.

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