JANKCBR2N3439-Transistor-Die Overview
The JANKCBR2N3439-Transistor-Die is a high-performance semiconductor device designed for precise switching and amplification in industrial electronics. Engineered to deliver stable operation under varied electrical conditions, this transistor die supports efficient power management and signal control in compact form factors. Its robust electrical characteristics make it suitable for integration in complex circuit designs where reliability and consistency are critical. Sourced from a reputable IC Manufacturer, this transistor die meets stringent quality standards, ensuring dependable performance in demanding environments.
JANKCBR2N3439-Transistor-Die Key Features
- High Current Handling Capacity: Enables effective management of elevated load currents for power-intensive applications.
- Low Saturation Voltage: Reduces power loss during switching, improving overall system efficiency.
- Compact Die Size: Facilitates integration into space-constrained electronic assemblies without compromising performance.
- Thermal Stability: Maintains consistent operation across a wide temperature range, enhancing device reliability.
JANKCBR2N3439-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector Current (IC) | 8 A |
| Power Dissipation (Ptot) | 50 W |
| DC Current Gain (hFE) | 60 ?C 160 |
| Transition Frequency (fT) | 100 MHz |
| Junction Temperature (Tj) | 150 ??C |
| Saturation Voltage (VCE(sat)) | 1.5 V max |
| Base-Emitter Voltage (VBE) | 1.2 V max |
JANKCBR2N3439-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior current capacity and low saturation voltage that enhance efficiency and reduce power dissipation compared to typical counterparts. Its robust thermal stability and high gain ensure reliable switching in high-frequency and high-power industrial circuits. These advantages support improved integration and long-term operational reliability, making it a preferred choice for engineers seeking dependable semiconductor solutions.
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Typical Applications
- Power amplification stages in industrial control systems where efficient current handling and low voltage drop are critical for performance and energy savings.
- Switching components in DC-DC converters for precise voltage regulation and improved power efficiency.
- Signal amplification in communication equipment requiring stable gain and frequency response.
- Driver transistors in motor control circuits, enabling reliable operation under varying load and temperature conditions.
JANKCBR2N3439-Transistor-Die Brand Info
The JANKCBR2N3439-Transistor-Die is produced by a leading semiconductor manufacturer known for delivering high-quality discrete components tailored for industrial electronics. This product line reflects the brand??s commitment to precision engineering and strict quality control, ensuring components meet rigorous performance and reliability standards demanded by global industrial applications.
FAQ
What is the maximum collector current rating for this transistor die?
The maximum collector current rating is 8 amperes, allowing it to handle significant load currents typical in power amplification and switching applications.
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How does the low saturation voltage benefit electronic circuit design?
Low saturation voltage minimizes voltage drops during transistor conduction, reducing power loss and improving overall circuit efficiency, which is essential for energy-sensitive industrial applications.
Can this transistor die operate reliably at high temperatures?
Yes, it supports a junction temperature of up to 150 ??C, ensuring stable performance and durability in environments with elevated thermal conditions.
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What frequency range is suitable for this transistor die??s operation?
With a transition frequency of 100 MHz, it is well-suited for high-frequency switching and amplification tasks within industrial and communications electronics.
Is this transistor die compatible with compact electronic assemblies?
Its compact die size enables integration into space-constrained designs, making it suitable for modern compact industrial electronic modules and systems.
