JANTX2N3791-Transistor Power Amplifier Transistor in TO-3 Package by JANT

JANTX2N3791-Transistor Overview

The JANTX2N3791 is a high-power NPN bipolar junction transistor designed for demanding industrial and military applications. Featuring robust voltage and current ratings, it offers reliable switching and amplification in harsh environments. With its high gain and low saturation voltage, this transistor ensures efficient performance in power regulation, motor control, and amplifier circuits. The device??s rugged design complies with JAN (Joint Army-Navy) quality specifications, guaranteeing enhanced durability and long-term stability. Engineers and sourcing specialists will find this transistor an excellent choice for high-reliability uses where consistent performance under stress is critical. For detailed sourcing and datasheets, visit the IC Manufacturer.

JANTX2N3791-Transistor Key Features

• High Voltage Capability: With a collector-emitter voltage rating of up to 100V, it supports high-voltage switching applications, enabling greater design flexibility.
• Maximum Collector Current: Handles collector currents up to 15A, facilitating use in power amplification and motor control circuits requiring substantial current flow.
• Low Saturation Voltage: Ensures efficient conduction with minimal power loss, improving overall system efficiency and thermal management.
• High DC Current Gain (hFE): Offers a gain range typically between 40 and 160, allowing stable amplification and control with lower base drive currents.
• Rugged Construction: Built to military standards (JAN certification), it withstands mechanical stress and temperature extremes for dependable performance.
• Fast Switching Characteristics: Suitable for switching regulators and pulse circuits, enhancing operational speed and reducing delay times.
• TO-3 Metal Package: Provides superior heat dissipation and mechanical protection, ensuring longevity in high-power applications.

JANTX2N3791-Transistor Technical Specifications

JANTX2N3791-Transistor Advantages vs Typical Alternatives

This transistor stands out for its combination of high current capability and voltage tolerance, surpassing many standard NPN power transistors. Its JAN certification ensures military-grade reliability, making it ideal for critical applications. The low saturation voltage improves efficiency compared to typical alternatives, reducing heat generation and power losses. Additionally, the TO-3 metal package offers superior thermal management, enhancing durability and enabling stable operation in high-temperature environments.

Typical Applications

• Power amplification in audio and industrial control circuits where high current and voltage handling are essential for stable operation.
• Motor control circuits requiring robust switching to manage high inrush currents and maintain efficiency under load.
• Switching regulators and DC-DC converters benefiting from fast switching performance and low conduction losses.
• Military and aerospace electronics demanding high reliability, durability, and compliance with stringent quality standards.

JANTX2N3791-Transistor Brand Info

The JANTX2N3791 transistor is manufactured under strict military specifications (JAN) ensuring premium quality and reliability. This brand is recognized for delivering rugged, high-performance semiconductor devices designed to meet the challenges of harsh environments and demanding industrial applications. The product??s adherence to JAN standards reflects a commitment to durability, consistent electrical performance, and extended operational lifespan, making it a trusted choice among engineers and sourcing professionals in critical sectors.

FAQ

What does the JAN certification imply for this transistor??s reliability?

JAN certification indicates that the transistor meets rigorous military standards for quality, reliability, and performance. It undergoes extensive testing to ensure it can operate reliably under harsh environmental conditions such as extreme temperatures, mechanical shock, and vibration, making it suitable for mission-critical applications.

Can this transistor be used in high-frequency switching applications?

Yes, with a transition frequency around 3 MHz, this transistor supports moderately high-frequency switching tasks. It is well-suited for switching regulators and pulse circuits where efficient and timely switching is required, although it may not be optimal for ultra-high-frequency RF applications.

What package type does this transistor use, and why is it beneficial?

The transistor is housed in a TO-3 metal can package. This package type provides excellent thermal conductivity and mechanical protection, allowing for effective heat dissipation and improved reliability in power-intensive environments, which extends device life and performance stability.

What are the typical voltage and current ratings for this device?

The device is rated for a maximum collector-emitter voltage of 100V and a collector current of up to 15A. These ratings enable it to handle substantial power levels, making it suitable for demanding power amplification and switching applications in industrial and military circuits.

How does the DC current gain range affect circuit design using this transistor?

The DC current gain (hFE) between 40 and 160 allows designers to achieve adequate amplification with relatively low base current. This range offers flexibility in biasing and control, enabling efficient operation and reducing the drive requirements from preceding stages in the circuit.