JANKCCH2N3500-Transistor-Die Overview
The JANKCCH2N3500-Transistor-Die is a high-performance semiconductor component designed for power switching and amplification applications. Engineered with precision silicon technology, this transistor die delivers reliable electrical characteristics suitable for industrial-grade circuits. It offers robust current handling and voltage endurance, ensuring stable operation in demanding environments. Its compact die format facilitates seamless integration into custom semiconductor modules or hybrid circuits, enhancing design flexibility. Sourcing specialists and engineers will appreciate its consistent performance parameters and compatibility with advanced packaging techniques. For more detailed semiconductor solutions, visit IC Manufacturer.
JANKCCH2N3500-Transistor-Die Key Features
- High Collector Current Capacity: Supports up to 4A continuous collector current, enabling efficient power handling in demanding applications.
- Elevated Collector-Emitter Voltage: Rated for 350V, providing ample voltage headroom for industrial and power switching circuits.
- Low Saturation Voltage: Ensures minimal conduction losses, improving overall system efficiency and thermal management.
- Optimized Die Size: Compact footprint allows for integration into custom power modules and hybrid assemblies, reducing PCB space.
JANKCCH2N3500-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Collector-Emitter Voltage (VCEO) | 350 V |
| Collector Current (IC) | 4 A (continuous) |
| Power Dissipation (Ptot) | 50 W (max, die level) |
| Transition Frequency (fT) | 70 MHz (typical) |
| Gain Bandwidth Product | 70 MHz |
| DC Current Gain (hFE) | 30 – 100 (at IC=1A) |
| Junction Temperature (TJ) | 150 ??C (max) |
| Package Type | Bare Die (Transistor Die) |
JANKCCH2N3500-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior voltage handling and current capacity compared to typical small-signal transistors, making it ideal for high-power industrial circuits. Its low saturation voltage reduces power loss and heat generation, increasing overall efficiency. Additionally, the bare die format provides flexibility for custom packaging and integration, unlike standard packaged devices, benefiting engineers focused on optimized system design and improved reliability.
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Typical Applications
- Power switching in industrial automation systems requiring high voltage and current handling with reliable transient response.
- Motor control circuits where efficient power amplification and heat dissipation are critical for performance and longevity.
- High-voltage DC-DC converters that demand robust transistor dies capable of sustaining high voltage and switching frequencies.
- Custom semiconductor modules and hybrid integrated circuits benefiting from compact transistor die integration.
JANKCCH2N3500-Transistor-Die Brand Info
The JANKCCH2N3500-Transistor-Die is produced by a leading semiconductor manufacturer specializing in industrial-grade power transistors and transistor dies. The product reflects the brand??s commitment to delivering reliable, high-quality components optimized for power switching and amplification. The brand supports stringent quality controls and advanced fabrication processes, ensuring each die meets the rigorous demands of modern electronic systems. This component is part of a broader portfolio tailored for engineers and designers who require precision and durability at the semiconductor level.
FAQ
What is the maximum collector current rating for this transistor die?
The maximum continuous collector current rating is 4 amperes, ensuring that the device can handle moderate to high power loads typical in industrial and power electronics applications without compromising reliability.
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Can this transistor die be used in high-voltage power switching applications?
Yes, with a collector-emitter voltage rating of 350 volts, this transistor die is suitable for high-voltage switching applications, including industrial control and power conversion circuits that require robust voltage endurance.
How does the bare die format benefit system designers?
The bare die format allows engineers to integrate the transistor directly into custom packages or hybrid modules, providing greater design flexibility, improved thermal performance, and reduced parasitic inductances compared to traditional packaged transistors.
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What are the thermal limitations of this transistor die?
The maximum junction temperature is rated at 150 degrees Celsius. Proper thermal management, such as heat sinking or module integration, is necessary to maintain device reliability and performance within this limit.
Is the current gain stable across operating conditions?
The DC current gain varies between 30 and 100 at a collector current of 1 ampere, providing adequate amplification for many power switching and amplification applications. Gain stability depends on operating conditions and should be considered during circuit design.
