JANKCCD2N5153-Transistor-Die Overview
The JANKCCD2N5153-Transistor-Die is a high-performance semiconductor component designed for efficient switching and amplification in electronic circuits. This transistor die offers robust electrical characteristics suitable for industrial applications requiring reliable current control and thermal stability. Its intrinsic design supports integration into complex assemblies, enhancing overall system performance. Engineers and sourcing specialists benefit from its precise manufacturing tolerances and consistent operation parameters, making it a versatile choice in power management and signal amplification roles. For detailed sourcing and technical support, visit the IC Manufacturer.
JANKCCD2N5153-Transistor-Die Key Features
- High current handling capability: Ensures efficient power delivery and switching performance in demanding applications.
- Low saturation voltage: Reduces power loss during operation, improving overall circuit efficiency.
- Thermal stability: Maintains reliable function under elevated temperature conditions, enhancing device longevity.
- Precision fabrication: Enables consistent electrical parameters across production batches for dependable system integration.
JANKCCD2N5153-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector Current (IC) | 8 A |
| Power Dissipation (Ptot) | 50 W |
| Gain Bandwidth Product (fT) | 80 MHz |
| Transition Frequency (fT) | 80 MHz |
| Collector-Base Voltage (VCBO) | 80 V |
| DC Current Gain (hFE) | 40 to 160 |
| Junction Temperature (Tj) | 150 ??C |
JANKCCD2N5153-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior current handling and low saturation voltage compared to typical alternatives, resulting in more efficient power management and reduced thermal stress. Its reliable gain characteristics and thermal stability make it particularly suited for demanding industrial electronics where accuracy and durability are critical. Engineers benefit from its consistent performance under varied conditions, enhancing system reliability while simplifying design integration.
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Typical Applications
- Power amplification in industrial control systems where high current and voltage handling are essential for driving loads and maintaining signal integrity.
- Switching elements in power supplies to ensure efficient voltage regulation and energy conversion.
- Signal modulation circuits requiring precise gain control and thermal stability.
- Motor control circuits where reliable switching under varying thermal conditions is critical to system performance.
JANKCCD2N5153-Transistor-Die Brand Info
The JANKCCD2N5153-Transistor-Die is produced by a leading semiconductor manufacturer known for delivering high-quality discrete components designed for industrial and automotive sectors. This product reflects the brand??s commitment to precision engineering and strict quality control, ensuring each transistor die meets rigorous performance standards. The brand??s extensive experience in transistor technology is evident in the device??s balance of power efficiency, reliability, and integration flexibility.
FAQ
What are the maximum voltage and current ratings for this transistor die?
The device supports a maximum collector-emitter voltage of 60 V and a collector current of up to 8 A, making it suitable for medium-power switching and amplification tasks in industrial applications.
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How does the thermal performance of this transistor die impact its applications?
With a maximum junction temperature of 150 ??C, the transistor die maintains stable operation under elevated thermal conditions. This thermal robustness ensures reliable function in environments with significant heat generation, extending device lifespan and reducing failure rates.
What does the DC current gain range indicate about this transistor die?
The DC current gain (hFE) ranges from 40 to 160, indicating the transistor??s ability to amplify input current effectively. This variability allows designers to select devices optimized for specific gain requirements within their circuits.
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Is this transistor die suitable for high-frequency applications?
Yes, the gain bandwidth product and transition frequency of 80 MHz enable the transistor die to perform well in moderately high-frequency circuits, such as signal modulation and amplification in industrial controls.
Can this transistor die be integrated into custom semiconductor assemblies?
Absolutely. Its precise fabrication and known electrical parameters support seamless integration into custom modules and hybrid circuits, facilitating tailored power management solutions in complex electronic systems.
