JANKCCL2N5153-Transistor-Die Overview
The JANKCCL2N5153-Transistor-Die is a high-performance semiconductor component designed for use in advanced electronic circuits. This transistor die offers robust switching capabilities and precise amplification, making it ideal for integration into a variety of industrial and consumer electronics. With its compact die form, it facilitates seamless embedding into multi-layer modules, enhancing system reliability and thermal performance. Manufactured to meet stringent quality standards, this transistor die supports efficient power management and signal processing in critical applications. For sourcing and detailed technical support, visit IC Manufacturer.
JANKCCL2N5153-Transistor-Die Key Features
- High current gain: Enables efficient signal amplification, improving overall circuit performance.
- Low saturation voltage: Reduces power loss during switching, increasing energy efficiency and thermal management.
- Compact die size: Facilitates integration into space-constrained applications and enhances thermal dissipation.
- Robust breakdown voltage: Ensures reliable operation under high voltage conditions, improving device longevity.
JANKCCL2N5153-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor (BJT) Die |
| Maximum Collector-Emitter Voltage (VCEO) | 60 V |
| Maximum Collector Current (IC) | 1.5 A |
| DC Current Gain (hFE) | 100 (typical) |
| Saturation Voltage (VCE(sat)) | 0.3 V (max) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Power Dissipation (Ptot) | 1.2 W |
| Junction Temperature (Tj max) | 150??C |
| Package Type | Unpackaged Die |
JANKCCL2N5153-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior integration flexibility due to its unpackaged form, allowing designers to optimize thermal management and PCB space. Its low saturation voltage minimizes conduction losses compared to standard packaged transistors. With a robust breakdown voltage and high current gain, it ensures reliable switching and amplification, outperforming many typical discrete alternatives in both efficiency and operational stability.
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Typical Applications
- Power management modules requiring efficient switching and amplification with minimal thermal constraints, such as DC-DC converters and power regulators.
- High-frequency signal amplification circuits in communication devices and industrial control systems.
- Embedded transistor arrays within multi-chip modules for automotive electronics and industrial automation.
- Custom semiconductor solutions where space optimization and thermal management are critical.
JANKCCL2N5153-Transistor-Die Brand Info
The JANKCCL2N5153 transistor die is a product of JANKCCL, a recognized name in semiconductor manufacturing known for precision and reliability. This transistor die exemplifies the brand??s commitment to delivering high-quality components tailored for advanced electronic design. The product supports a wide range of industrial and commercial applications, reflecting JANKCCL??s expertise in providing cutting-edge transistor technology with consistent performance and reliability.
FAQ
What is the maximum voltage rating for this transistor die?
The transistor die supports a maximum collector-emitter voltage (VCEO) of 60 volts, ensuring it can operate reliably in moderate to high voltage circuits without breakdown.
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Can this transistor die handle high current loads?
Yes, it is designed to handle collector currents up to 1.5 amperes, making it suitable for applications requiring moderate power switching and amplification.
Is the transistor die suitable for high-frequency applications?
With a typical transition frequency (fT) of 100 MHz, this die performs efficiently in high-frequency amplification and switching circuits, such as RF and communication modules.
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How does the die form factor benefit system design?
The unpackaged die allows for customized integration into semiconductor modules, improving thermal dissipation and saving PCB space compared to traditional packaged transistors.
What are the thermal limits for operating this transistor die?
The device can operate safely up to a maximum junction temperature of 150??C, providing a wide thermal margin for demanding industrial and automotive environments.
