JANKCCM2N5153-Transistor-Die Overview
The JANKCCM2N5153-Transistor-Die is a high-performance semiconductor component designed for efficient switching and amplification in electronic circuits. This transistor die offers robust electrical characteristics suitable for integration into various industrial and consumer electronics applications. Its compact die format facilitates custom packaging and direct integration into advanced semiconductor modules, ensuring optimized thermal management and signal integrity. Sourcing this transistor die through IC Manufacturer guarantees compliance with industry standards and reliable device performance for demanding electronic designs.
JANKCCM2N5153-Transistor-Die Key Features
- High Gain Capability: Enables efficient signal amplification, improving overall circuit sensitivity and response.
- Low Saturation Voltage: Reduces power loss during switching, enhancing energy efficiency in power management applications.
- Excellent Thermal Stability: Supports consistent performance under varying temperature conditions, increasing device reliability.
- Compact Die Size: Facilitates seamless integration into multi-chip modules and custom packaging solutions.
JANKCCM2N5153-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor (BJT) Die |
| Maximum Collector-Emitter Voltage (VCEO) | 50 V |
| Maximum Collector Current (IC) | 1.5 A |
| DC Current Gain (hFE) | 70 ?C 120 |
| Transition Frequency (fT) | 100 MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.3 V @ 1A |
| Power Dissipation (Ptot) | 1.25 W (die-level) |
| Operating Temperature Range | -55??C to +150??C |
| Package Type | Transistor Die (bare silicon) |
JANKCCM2N5153-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior electrical performance with a higher gain and lower saturation voltage compared to typical discrete transistors. Its compact die form enables enhanced thermal management and integration flexibility, which are critical for modern semiconductor assemblies. These features translate to improved power efficiency, reliability, and overall circuit performance, making it an advantageous choice for engineers seeking precision and robustness in transistor dies.
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Typical Applications
- High-frequency amplification circuits, where the device??s transition frequency and gain optimize signal processing and fidelity in communication and instrumentation systems.
- Power switching applications requiring efficient energy conversion and minimal power loss during transistor saturation phases.
- Embedded semiconductor modules that demand compact transistor dies for space-constrained electronic assemblies.
- Industrial control systems that operate over wide temperature ranges and require reliable transistor performance under thermal stress.
JANKCCM2N5153-Transistor-Die Brand Info
The JANKCCM2N5153-Transistor-Die is part of a specialized semiconductor product line offered by JANKCCM, known for delivering high-quality transistor dies tailored for advanced electronic manufacturing. This product reflects the brand??s commitment to precision engineering, reliability, and compatibility with custom packaging and integration solutions. The brand supports engineers and sourcing specialists with consistent device quality and comprehensive technical documentation.
FAQ
What type of transistor is the JANKCCM2N5153-Transistor-Die?
The device is an NPN bipolar junction transistor (BJT) die designed for amplification and switching applications. It is provided as a bare silicon die for integration into custom semiconductor packages.
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What are the maximum voltage and current ratings for this transistor die?
This transistor die can handle up to 50 volts collector-emitter voltage and a maximum collector current of 1.5 amperes, making it suitable for moderate power applications.
How does the transistor??s gain impact circuit performance?
The DC current gain (hFE) of 70 to 120 means the transistor can effectively amplify weak input signals, improving sensitivity and accuracy in electronic circuits.
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Is the device suitable for high-frequency applications?
Yes, with a transition frequency of approximately 100 MHz, the transistor die supports high-speed switching and amplification, benefiting RF and communication circuit designs.
What temperature range can the JANKCCM2N5153-Transistor-Die operate within?
The transistor die maintains reliable operation over a wide temperature range from -55??C to +150??C, ensuring durability in harsh industrial environments.
