JAN2N3792-Transistor by JAN – High-Power Switching Transistor, TO-3 Package

  • Switches or amplifies electrical signals efficiently, enabling precise control in electronic circuits.
  • Operates effectively within specified voltage ranges, ensuring stable performance under varying loads.
  • Features a compact package that supports board-space savings and simplifies circuit design integration.
  • Ideal for use in consumer electronics, improving device responsiveness and energy management.
  • Manufactured to meet rigorous quality standards, providing consistent reliability throughout its service life.
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JAN2N3792-Transistor Overview

The JAN2N3792 transistor is a high-power NPN silicon transistor designed for rugged industrial and military applications requiring reliable switching and amplification performance. Featuring a robust collector-emitter voltage rating and high collector current capacity, this device delivers dependable operation in demanding environments. Its metal can package enhances thermal dissipation and mechanical durability, making it suitable for power amplification, voltage regulation, and motor control circuits. Engineers and sourcing specialists will find this transistor an excellent choice for applications that prioritize reliability and long-term stability. For detailed specifications and sourcing, visit the IC Manufacturer website.

JAN2N3792-Transistor Key Features

  • High collector-emitter voltage (VCEO): Enables operation in circuits with voltages up to 100 V, providing flexibility in high-voltage applications.
  • Collector current rating of 15 A: Supports high current loads, suitable for power switching and amplification roles.
  • Low saturation voltage: Improves efficiency by minimizing power dissipation during switching.
  • TO-3 metal can package: Enhances thermal performance and mechanical reliability under harsh operating conditions.
  • Gain bandwidth product: Offers stable gain characteristics for amplification across a range of frequencies.
  • Designed to military standards (JAN prefix): Ensures high reliability and quality assurance for critical applications.

JAN2N3792-Transistor Technical Specifications

Parameter Specification
Type NPN Silicon Transistor
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 120 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 15 A (max)
Power Dissipation (PD) 115 W (max)
DC Current Gain (hFE) 40 to 160 (at IC = 4 A)
Transition Frequency (fT) 5 MHz (typical)
Package Type TO-3 Metal Can
Operating Junction Temperature Up to 200 ??C

JAN2N3792-Transistor Advantages vs Typical Alternatives

This transistor stands out against typical alternatives by combining a high collector current capability with a robust voltage rating in a thermally efficient TO-3 package. Its military-grade JAN certification guarantees superior reliability and performance consistency in critical applications. The low saturation voltage reduces power losses, enhancing overall system efficiency while maintaining stable gain across frequencies. These features make it a trusted choice for engineers seeking durable, high-performance transistors for demanding industrial environments.

Typical Applications

  • Power amplification circuits requiring high current and voltage handling capability, such as audio power amplifiers or RF transmitters.
  • Switching regulators and voltage control systems where stable operation and thermal management are critical.
  • Motor driver circuits in industrial machinery that demand reliable high-current switching under harsh conditions.
  • Military and aerospace systems benefiting from the transistor’s JAN certification for ruggedness and quality assurance.

JAN2N3792-Transistor Brand Info

The JAN2N3792 transistor is produced under stringent military standards, denoted by the JAN (Joint Army-Navy) prefix, reflecting its qualification for high-reliability applications. This product is manufactured using proven silicon technology, packaged in a durable TO-3 metal can for enhanced thermal dissipation and mechanical protection. The brand behind this transistor upholds rigorous testing and quality control to meet the requirements of industrial and defense sectors, ensuring consistent performance and longevity in mission-critical environments.

FAQ

What does the JAN prefix in JAN2N3792 signify?

The JAN prefix indicates that the transistor meets Joint Army-Navy military standards for quality and reliability. This means the device has undergone stringent testing to ensure it performs reliably under harsh environmental and operational conditions typical in military and aerospace applications.

What package type does this transistor use, and why is it important?

This transistor uses a TO-3 metal can package, which is important because it provides excellent thermal conductivity and mechanical durability. The package helps dissipate heat efficiently, allowing the device to handle high power levels without degradation, making it suitable for demanding industrial and military applications.

What are the key electrical limits of this transistor?

The transistor supports a maximum collector-emitter voltage of 100 V and a collector current up to 15 A. It can dissipate up to 115 W of power and operate at junction temperatures as high as 200 ??C, making it robust for high-power switching and amplification tasks.

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Where is this transistor typically used in industrial applications?

This device is commonly used in power amplification, switching regulators, motor control circuits, and other industrial electronics requiring high current and voltage handling. Its reliability and thermal performance also make it ideal for military and aerospace systems.

How does the DC current gain (hFE) affect transistor performance?

The DC current gain, ranging from 40 to 160 at a collector current of 4 A, indicates the amplification capability of the transistor. A stable and appropriate gain ensures efficient signal amplification and switching without distortion or excessive power loss, critical for precise control in electronic circuits.

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