JAN2N2919U-Dual-Transistor by JAN | High-Gain Amplifier | TO-39 Metal Can Package

  • This dual transistor device enables efficient signal amplification and switching in electronic circuits.
  • Low noise performance ensures clearer signal transmission, improving overall circuit stability.
  • The compact package design supports board-space savings in densely populated electronic assemblies.
  • Ideal for audio and RF applications, it enhances performance by providing reliable gain and switching capabilities.
  • Manufactured with stringent quality controls, it delivers consistent operation under varying environmental conditions.
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产品上方询盘

JAN2N2919U-Dual-Transistor Overview

The JAN2N2919U dual transistor is a high-performance bipolar junction transistor (BJT) device tailored for rugged industrial and military applications. Featuring two matched NPN transistors in one package, this component delivers reliable amplification and switching capabilities under demanding conditions. Its robust construction ensures enhanced thermal stability and durability, making it suitable for high-reliability systems. Engineers and sourcing specialists can leverage this device for efficient circuit design where consistent gain and noise performance are critical. For detailed sourcing and technical support, visit the IC Manufacturer website.

JAN2N2919U-Dual-Transistor Key Features

  • Dual matched NPN transistors: Provides consistent gain characteristics, allowing precise differential amplifier configurations and balanced circuit designs.
  • High voltage rating: Supports collector-emitter voltages up to 40 V, enabling use in a wide range of power and switching applications.
  • High current capability: Handles collector currents up to 800 mA, ensuring reliable operation in moderate power amplification and switching roles.
  • Military-grade JAN specification: Guarantees enhanced reliability and quality control for mission-critical systems.

JAN2N2919U-Dual-Transistor Technical Specifications

ParameterValueUnit
Transistor TypeNPN Dual?C
Collector-Emitter Voltage (V_CEO)40V
Collector-Base Voltage (V_CBO)60V
Emitter-Base Voltage (V_EBO)5V
Collector Current (I_C)800mA
Power Dissipation (P_TOT)625mW
DC Current Gain (h_FE)40 to 300?C
Transition Frequency (f_T)100MHz
Package TypeTO-18 Metal Can?C
Operating Temperature Range-55 to +200??C

JAN2N2919U-Dual-Transistor Advantages vs Typical Alternatives

This dual transistor offers superior thermal stability and matched transistor characteristics within a single package, which improves circuit symmetry and minimizes drift compared to discrete transistor pairs. Its military-grade JAN qualification ensures enhanced reliability and tighter performance tolerances, making it preferable over standard commercial variants where accuracy and ruggedness are critical.

Typical Applications

  • Differential amplifier circuits that require tightly matched transistor pairs to maintain signal integrity and reduce offset voltage in precision analog designs.
  • Switching circuits in industrial control systems, where the device??s high current and voltage ratings enable robust operation.
  • Signal amplification stages in communication equipment, leveraging the device??s high gain and frequency response.
  • Military and aerospace electronics demanding high-reliability components capable of operating over a wide temperature range.

JAN2N2919U-Dual-Transistor Brand Info

The JAN2N2919U dual transistor is produced under the Joint Army-Navy (JAN) standard, representing a class of semiconductor devices built to stringent military specifications. This product??s brand identity is closely tied to its reliability, quality assurance, and performance consistency. Designed for use in high-reliability environments, it reflects a commitment to meet rigorous testing and certification processes, ensuring dependable operation in defense, aerospace, and industrial sectors.

FAQ

What is the maximum collector current supported by this dual transistor?

The maximum collector current is rated at 800 mA, allowing the device to handle moderate power loads suitable for amplification and switching applications without compromising reliability.

How does the JAN2N2919U ensure matched transistor performance?

The dual transistor configuration integrates two NPN transistors within the same package, fabricated simultaneously to ensure closely matched electrical characteristics, which is essential for balanced circuit designs such as differential amplifiers.

What package type does this transistor use, and why is it important?

This device comes in a TO-18 metal can package, which provides excellent thermal conductivity and mechanical protection, contributing to improved heat dissipation and enhanced device longevity in harsh environments.

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产品中间询盘

Is this transistor suitable for high-frequency applications?

Yes, with a transition frequency (f_T) of approximately 100 MHz, it is capable of operating effectively in moderate to high-frequency analog and switching circuits.

What temperature range can the JAN2N2919U operate within?

The transistor is specified for operation from -55??C up to +200??C, making it suitable for extreme temperature conditions commonly encountered in military and aerospace applications.

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