2N5666-Transistor by ON Semiconductor – NPN Amplifier Transistor, TO-18 Package

2N5666-Transistor Overview

The 2N5666 transistor is a high-performance silicon NPN bipolar junction transistor designed for low-power amplification and switching applications. It features a maximum collector current (Ic) of 3A and a collector-emitter voltage (Vceo) rating of 60V, making it suitable for medium-power industrial and consumer electronics. This device offers reliable operation with a power dissipation of up to 30W and a complementary balance between gain and switching speed. Engineered for robustness and consistent performance, the transistor serves as a versatile component in amplifier circuits, drivers, and signal processing stages. For detailed sourcing and technical support, visit IC Manufacturer.

2N5666-Transistor Key Features

• High collector current (3A) enables efficient handling of moderate power loads without thermal overstress, ensuring durability in demanding applications.
• Collector-emitter voltage rating of 60V supports operation in a wide range of voltage environments, enhancing design flexibility for engineers.
• Power dissipation capacity of 30W improves reliability by allowing the transistor to operate under higher load conditions with appropriate heat sinking.
• Medium gain (hFE) range provides effective amplification and switching characteristics, optimizing circuit performance and signal integrity.

2N5666-Transistor Technical Specifications

2N5666-Transistor Advantages vs Typical Alternatives

This transistor stands out with its combination of moderate voltage handling and high collector current, which is higher than many comparable small-signal transistors. The wide hFE range ensures adaptable gain for various circuit demands, while the 30W power dissipation rating allows for more robust thermal management. These features collectively offer improved reliability and performance, particularly in switching and amplification roles where heat and current capacity are critical design factors.

Typical Applications

• Audio amplifier circuits, where moderate power handling and gain stability are essential for clear sound reproduction and minimal distortion over extended use.
• Switching regulators and power management, benefiting from the transistor??s ability to handle up to 3A collector current efficiently.
• Driver stages in industrial control systems, which require reliable transistor switching under varying load conditions.
• General-purpose amplification in consumer electronics, providing balanced performance in signal processing and amplification tasks.

2N5666-Transistor Brand Info

The 2N5666 transistor is a well-established semiconductor device widely recognized for its dependable performance in medium-power applications. Manufactured to meet stringent quality standards, this transistor is commonly supplied in a TO-39 metal can package, offering robust thermal conductivity and mechanical stability. Its consistent specifications and reliability make it a trusted choice among engineers and sourcing specialists in industrial and consumer electronics sectors.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current for this transistor is rated at 3 amperes, allowing it to handle moderate power loads effectively in switching and amplification circuits. This makes it suitable for applications requiring reliable current flow without overheating.

What package type does this transistor use?

This transistor is housed in a TO-39 metal can package, which provides excellent heat dissipation and mechanical protection, making it ideal for applications requiring robust thermal management and durability.

What is the typical DC current gain (hFE) range of this device?

The transistor??s DC current gain varies between 40 and 160, depending on operating conditions. This wide gain range enables flexibility in circuit design, facilitating both amplification and switching roles with stable performance.

Can this transistor operate at high frequencies?

Yes, the device has a transition frequency (fT) of approximately 70 MHz, which supports moderate-frequency operation. This characteristic allows it to be used in signal amplification and switching applications within this frequency range.

What are the voltage limits for this transistor?

The transistor is rated for a maximum collector-emitter voltage (Vceo) of 60V, collector-base voltage (Vcbo) of 80V, and emitter-base voltage (Vebo) of 7V. These ratings define the safe operating voltage boundaries to ensure reliable and damage-free operation.