JAN2N6989-Quad-Transistor by JAN | High-Speed Switching Transistor | TO-220 Package

  • This device functions as a quad transistor array, enabling efficient signal amplification in compact circuits.
  • Low leakage current ensures stable performance and reduces power loss in sensitive applications.
  • Its compact package design saves board space, facilitating integration into densely populated PCBs.
  • Ideal for switching and amplification tasks in consumer electronics, improving overall device responsiveness.
  • Manufactured under strict quality controls to maintain consistent electrical characteristics and long-term reliability.
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JAN2N6989-Quad-Transistor Overview

The JAN2N6989-Quad-Transistor is a high-reliability, military-grade semiconductor device featuring four matched NPN transistors within a single package. Designed for precision amplification and switching applications, it offers stable electrical characteristics under varied environmental conditions. This quad-transistor configuration provides engineers with a compact, integrated solution that enhances circuit density and reduces assembly complexity. With robust construction and tight parameter control, it meets stringent requirements for industrial and defense electronics. Sourced from a trusted supplier, it ensures consistent performance and long-term durability in demanding electronic systems. For more details, visit IC Manufacturer.

JAN2N6989-Quad-Transistor Key Features

  • Four matched NPN transistors in one package: Enables compact circuit designs and precise transistor pairing for improved signal integrity.
  • High gain uniformity: Ensures consistent amplification across all transistors, critical for balanced multi-stage amplifier circuits.
  • Wide operating voltage range: Supports diverse power supply environments, enhancing design flexibility.
  • Military-grade quality standards: Delivers enhanced reliability and performance under extreme temperature and mechanical stress.

JAN2N6989-Quad-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor (BJT)
Number of Transistors 4 (Quad configuration)
Collector-Emitter Voltage (VCEO) 30 V
Collector Current (IC) 100 mA max per transistor
DC Current Gain (hFE) 100 to 300 (typical)
Transition Frequency (fT) 100 MHz (typical)
Power Dissipation (Ptot) 400 mW max
Operating Temperature Range -55??C to +125??C
Package Type TO-99 Metal Can

JAN2N6989-Quad-Transistor Advantages vs Typical Alternatives

This quad-transistor device offers superior integration by combining four matched NPN transistors in a single package, reducing board space and improving thermal matching compared to discrete transistors. Its military-grade construction ensures enhanced reliability and stable electrical performance under harsh conditions, making it preferable for critical industrial and defense applications. The device??s consistent gain and frequency response provide improved accuracy and sensitivity over typical commercial transistors, supporting high-precision analog and switching circuits.

Typical Applications

  • Multi-stage amplifier circuits requiring matched transistor pairs for balanced gain and low distortion in communication and instrumentation equipment.
  • Low-noise switching circuits where transistor uniformity improves signal integrity and reduces noise contributions.
  • Temperature-compensated analog signal processing, benefiting from tight parameter matching within a single package.
  • Military and aerospace electronic systems demanding rugged, high-reliability components capable of withstanding extreme environments.

JAN2N6989-Quad-Transistor Brand Info

The JAN2N6989-Quad-Transistor is manufactured under rigorous military specifications, ensuring compliance with JAN (Joint Army-Navy) standards for electronic components. This product is recognized for its high reliability, electrical consistency, and rugged construction, making it a preferred choice for defense contractors and industrial engineers. The brand behind this device emphasizes quality control and traceability, guaranteeing performance in mission-critical applications. Its established reputation supports long-term sourcing and lifecycle management for complex electronic systems.

FAQ

What is the main advantage of using a quad-transistor device like this one?

The primary advantage is the integration of four matched NPN transistors in a single package, which saves PCB space and ensures closely matched electrical characteristics. This leads to better performance in multi-transistor circuits, such as amplifiers, by reducing variations caused by separate devices.

Can this transistor operate reliably in harsh environments?

Yes, the device is built to military-grade standards and can operate across a wide temperature range from -55??C to +125??C. Its robust metal can package also provides mechanical protection, making it suitable for harsh industrial and aerospace environments.

What are the electrical limits for collector current and voltage?

Each transistor in the quad can handle a maximum collector current of 100 mA and withstand a collector-emitter voltage up to 30 V. These limits ensure safe operation within standard low-power signal processing circuits.

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How does the transition frequency impact performance?

The typical transition frequency of 100 MHz indicates the device??s capability to operate effectively at high frequencies, making it suitable for RF amplification and high-speed switching applications where fast transistor response is critical.

Is this device suitable for precision analog applications?

Yes, the tight gain matching and stable characteristics of the four transistors within the same package make it ideal for precision analog circuits that demand consistent transistor parameters, such as balanced amplifiers and differential stages.

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