JANTXV2N5664P-Transistor-PIND by JANTX ?C High-Speed Switching Transistor, PIND Package

  • This transistor enables efficient signal amplification, improving circuit performance in various electronic designs.
  • Its specified voltage rating ensures stable operation under typical electrical stresses, enhancing device protection.
  • The PIND package offers a compact footprint that simplifies mounting and saves valuable board space.
  • Ideal for switching applications in control systems, it provides reliable response and smoother operation.
  • Manufactured with quality controls to maintain consistent performance and long-term reliability in demanding environments.
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产品上方询盘

JANTXV2N5664P-Transistor-PIND Overview

The JANTXV2N5664P is a high-performance transistor designed for precision switching and amplification in industrial and military-grade applications. This transistor features a robust design with stringent screening per JAN standards, ensuring superior reliability and stability under demanding conditions. With its complementary PNP configuration, it supports effective current gain and voltage handling, making it ideal for use in complex electronic circuits. Engineered to meet rigorous quality requirements, this device is optimized for longevity and consistent electrical performance. For detailed sourcing and product inquiries, refer to IC Manufacturer.

JANTXV2N5664P-Transistor-PIND Key Features

  • High Current Gain: Offers efficient signal amplification, improving circuit sensitivity and response.
  • JAN Screening Compliance: Meets military-grade standards, ensuring enhanced reliability and durability in harsh environments.
  • Low Noise Operation: Supports clean switching and amplification, critical for precision electronics.
  • Robust Package Design: Provides superior thermal dissipation and mechanical stability for sustained performance.

JANTXV2N5664P-Transistor-PIND Technical Specifications

ParameterSpecification
TypePNP Bipolar Junction Transistor
Collector-Emitter Voltage (Vce)60 V
Collector Current (Ic)600 mA
Power Dissipation (Ptot)800 mW
DC Current Gain (hFE)40 to 300
Transition Frequency (fT)100 MHz
Operating Temperature Range-55??C to +125??C
Package TypePlastic Induction Device (PIND) Package

JANTXV2N5664P-Transistor-PIND Advantages vs Typical Alternatives

This transistor provides superior reliability and tighter parameter control compared to standard commercial types. Its JAN screening ensures consistent operation in extreme temperature and voltage conditions, making it ideal for mission-critical applications. The combination of high current gain and low noise improves circuit efficiency and signal integrity, providing a dependable solution where precision and durability are paramount.

Typical Applications

  • Precision analog signal amplification in aerospace and military electronic systems requiring highly reliable components with stringent quality standards.
  • Switching elements in industrial control circuits where robustness and thermal stability are critical for operational longevity.
  • Low noise amplifier stages in communication equipment, enhancing overall signal clarity and system performance.
  • Complementary transistor pairs in analog and digital interface circuits requiring matched PNP configurations.

JANTXV2N5664P-Transistor-PIND Brand Info

The JANTXV2N5664P transistor is part of the JAN (Joint Army-Navy) series, known for military-grade screening and testing processes. This brand specializes in delivering components that meet strict performance and reliability criteria suitable for defense, aerospace, and high-reliability industrial applications. The product is built to comply with rigorous standards, ensuring consistent electrical characteristics and extended service life under harsh conditions.

FAQ

What does the JAN screening certification mean for this transistor?

JAN screening certifies that the transistor has undergone extensive testing for reliability, including temperature cycling, burn-in, and electrical parameter verification. This ensures the device performs consistently in demanding environments, meeting military and aerospace quality standards.

What are the key electrical limits of this transistor?

The transistor supports a maximum collector-emitter voltage of 60 V, collector current up to 600 mA, and power dissipation of 800 mW. It operates reliably within a temperature range from -55??C to +125??C, suitable for harsh environments.

How does the PIND package benefit the device’s performance?

The Plastic Induction Device (PIND) package offers enhanced mechanical protection and improved thermal dissipation, which helps maintain stable operation and prolongs the transistor??s lifespan under continuous use and temperature variations.

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产品中间询盘

In what kind of circuits is this transistor typically used?

This transistor is commonly used in analog amplification, switching, and interface circuits where high gain, low noise, and reliability are required. It is especially suited for military, aerospace, and industrial control applications.

Can this transistor be used in high-frequency applications?

Yes, with a transition frequency (fT) of approximately 100 MHz, it is suitable for moderate high-frequency applications, including RF amplifiers and signal processing circuits requiring reliable PNP transistor performance.

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