JANTXV2N5664-Transistor by JAN | High-Power NPN Transistor | TO-3 Package

  • This transistor controls electrical current flow, enabling efficient signal amplification in circuits.
  • It offers a breakdown voltage suitable for handling moderate power levels safely during operation.
  • The package design provides a compact footprint, allowing easier integration on densely populated boards.
  • Ideal for switching applications where stable performance ensures consistent device operation.
  • Manufactured with quality standards that ensure long-term reliability under normal usage conditions.
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产品上方询盘

JANTXV2N5664-Transistor Overview

The JANTXV2N5664-Transistor is a high-performance NPN bipolar junction transistor designed for use in demanding industrial and military applications. With its robust construction and reliable switching capabilities, this transistor delivers consistent operation under harsh conditions. It supports high voltage and current levels, making it suitable for power amplification and switching tasks. This device ensures enhanced durability and precise electrical characteristics, meeting rigorous standards for reliability and performance. Sourcing specialists and design engineers can leverage its proven specifications for efficient circuit integration. For more detailed product insights, visit IC Manufacturer.

JANTXV2N5664-Transistor Key Features

  • High voltage rating: Supports collector-emitter voltages up to 100V, enabling use in high voltage switching and amplification circuits.
  • Reliable current handling: Maximum collector current of 10A allows for effective power switching in demanding applications.
  • Robust gain performance: DC current gain (hFE) ranging from 40 to 160 ensures stable amplification with good linearity.
  • Military-grade durability: Designed to meet JAN (Joint Army-Navy) specifications for enhanced reliability in harsh environments.

JANTXV2N5664-Transistor Technical Specifications

Parameter Value Units
Collector-Emitter Voltage (VCEO) 100 Volts
Collector-Base Voltage (VCBO) 120 Volts
Emitter-Base Voltage (VEBO) 5 Volts
Collector Current (IC) 10 Amperes
DC Current Gain (hFE) 40 ?C 160 Unitless
Power Dissipation (Ptot) 30 Watts
Transition Frequency (fT) 100 MHz
Package Type TO-39 Metal Can ??

JANTXV2N5664-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current handling compared to typical small-signal transistors, ensuring enhanced robustness in power control applications. Its military-grade certification guarantees increased reliability under extreme thermal and electrical stress. The wide DC current gain range provides flexible amplification, while the metal can package improves thermal dissipation. These features make it a preferred choice for engineers seeking durable, high-accuracy switching components in demanding industrial environments.

Typical Applications

  • Power amplification in industrial control circuits requiring high voltage and current capacity with reliable gain performance.
  • Switching elements in military and aerospace electronic systems where component durability and precision are critical.
  • Signal amplification in rugged environments demanding stable transistor operation under temperature variations.
  • General-purpose transistor use in electronic assemblies needing robust switching and amplification capabilities.

JANTXV2N5664-Transistor Brand Info

The JANTXV2N5664-Transistor is part of the well-established JAN series, known for its adherence to stringent military standards. This product line is recognized for ruggedness, reliability, and consistent performance in harsh environments. The transistor is manufactured using proven semiconductor fabrication processes that ensure long-term stability and minimal performance drift. Its TO-39 metal can packaging further enhances mechanical protection and thermal management, making it a trusted component for defense and industrial technology sectors.

FAQ

What voltage ratings does this transistor support?

The transistor supports a maximum collector-emitter voltage (VCEO) of 100 volts and a collector-base voltage (VCBO) of 120 volts. These ratings allow it to operate safely in high-voltage switching and amplification circuits.

What are the current handling capabilities of this transistor?

This device can handle a maximum collector current (IC) of up to 10 amperes, making it suitable for power applications requiring significant current flow without compromising performance.

How does the DC current gain range affect circuit design?

The DC current gain (hFE) ranges from 40 to 160, providing flexibility for engineers to design circuits with varying amplification needs. This ensures stable operation across different load conditions and signal levels.

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产品中间询盘

What package type is used for this transistor and why is it important?

The transistor is housed in a TO-39 metal can package, which offers superior thermal dissipation and mechanical protection compared to plastic packages. This enhances reliability, especially in high-power or high-temperature environments.

Is this transistor suitable for military applications?

Yes, it is manufactured to meet JAN (Joint Army-Navy) military specifications, ensuring it can withstand rigorous environmental and electrical stresses common in defense and aerospace applications.

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