JANSP2N3498L-Transistor by JAN | NPN Power Amplifier Transistor | TO-220 Package

JANSP2N3498L-Transistor Overview

The JANSP2N3498L is a high-voltage NPN bipolar junction transistor designed for rugged industrial and power switching applications. Offering a collector-emitter voltage (V_CEO) up to 300V and a collector current (I_C) rating of 10A, it excels in handling demanding load conditions. Its robust construction ensures dependable operation in harsh environments, making it a preferred choice for power amplifiers, motor control circuits, and general switching tasks. The device??s complementary balance between gain and voltage rating enables efficient energy management while maintaining thermal stability. Available through IC Manufacturer, this transistor supports engineers and sourcing specialists seeking a reliable, industrial-grade semiconductor solution.

JANSP2N3498L-Transistor Key Features

• High voltage tolerance: Supports collector-emitter voltage up to 300V, ideal for high-voltage switching and amplification.
• High collector current capacity: Rated for continuous current up to 10A, enabling robust power handling in demanding circuits.
• Moderate gain (h_FE): Provides sufficient current amplification for stable and predictable operation in control applications.
• Durable TO-3 metal package: Ensures excellent thermal dissipation and mechanical reliability under industrial stress conditions.

JANSP2N3498L-Transistor Technical Specifications

JANSP2N3498L-Transistor Advantages vs Typical Alternatives

This transistor offers a superior combination of high voltage and high current handling compared to typical low-power BJTs. Its robust TO-3 metal package enhances thermal management, reducing the risk of overheating under continuous load. The moderate gain range ensures predictable amplification without excessive noise, making it reliable for power switching and amplification roles. Its rugged design supports long-term operation in industrial environments where reliability and stability are critical.

Typical Applications

• Power amplifiers in audio and industrial control systems, where high voltage and current capabilities ensure efficient signal handling and output power.
• Motor control circuits requiring durable switching devices to handle inductive loads with voltage spikes.
• Voltage regulation and linear regulators benefiting from stable gain and robust voltage ratings.
• General-purpose switching in industrial power management systems, including relay driving and load switching.

JANSP2N3498L-Transistor Brand Info

The JANSP2N3498L is manufactured under the JAN (Joint Army-Navy) specification, indicating a military-grade semiconductor device built to stringent quality and reliability standards. This ensures consistent performance under extreme environmental conditions, making it suitable for critical industrial and defense applications. The product is recognized for its durability, precise electrical characteristics, and compliance with rigorous testing protocols, reflecting the trusted legacy of semiconductor devices designed for high-reliability sectors.

FAQ

What is the maximum voltage rating of this transistor?

The maximum collector-emitter voltage (V_CEO) is 300 volts, allowing it to handle high-voltage switching and amplification tasks safely within this limit.

Can this transistor handle continuous high current loads?

Yes, it can sustain a continuous collector current (I_C) of up to 10 amperes, making it suitable for power applications requiring substantial current flow.

What package type does this transistor use, and why is it important?

This device uses a TO-3 metal can package, which provides excellent thermal dissipation and mechanical durability, essential for maintaining performance under industrial operating conditions.

How does the current gain range affect circuit design?

With a DC current gain (h_FE) typically between 20 and 70, the transistor offers moderate amplification, balancing gain and stability for reliable switching and amplification without introducing excessive noise.

Is this transistor suitable for high-frequency applications?

Its transition frequency (f_T) of approximately 4 MHz indicates it can be used in mid-frequency applications, but it is primarily optimized for power and switching roles rather than high-frequency RF circuits.