2N6212-Transistor by ON Semiconductor – PNP Power Transistor, TO-3 Package

2N6212-Transistor Overview

The 2N6212 is a high-power NPN bipolar junction transistor designed for medium- to high-voltage switching and amplification applications. With a collector-emitter voltage rating suitable for robust industrial circuits, it delivers reliable current handling and gain characteristics. This transistor is well-suited for power amplification, driver stages, and switching regulators, offering engineers a dependable solution for demanding environments. Its sturdy construction ensures durability and stable performance under thermal stress. For sourcing and detailed specifications, visit IC Manufacturer.

2N6212-Transistor Key Features

• High voltage tolerance: Supports collector-emitter voltages up to 100V, enabling robust operation in power-intensive circuits.
• Substantial collector current capability: Handles collector currents up to 10A, allowing effective switching and amplification of larger loads.
• Low saturation voltage: Ensures efficient conduction with minimal power loss, improving overall circuit efficiency.
• Thermally stable design: Maintains performance reliability over a wide temperature range, reducing failure rates in industrial applications.

2N6212-Transistor Technical Specifications

2N6212-Transistor Advantages vs Typical Alternatives

This transistor outperforms many typical alternatives with its high voltage and current ratings, allowing for use in more demanding power switching and amplification scenarios. Its low saturation voltage improves energy efficiency, while the TO-3 package provides enhanced thermal dissipation compared to plastic-encapsulated devices. This combination of durable construction and strong electrical characteristics makes it a preferred choice for reliable industrial applications requiring robust performance and longevity.

Typical Applications

• Power amplifier stages in audio and industrial signal processing systems, where high current gain and voltage capacity are essential for driving heavy loads.
• Switching regulators and voltage converters requiring reliable high-power switching capability with minimal losses.
• Motor control circuits that demand high current handling and thermal stability for continuous operation.
• General-purpose power switching in industrial automation and control systems, benefiting from the device’s ruggedness and high power ratings.

2N6212-Transistor Brand Info

This transistor is a well-established product from manufacturers specializing in discrete semiconductor devices. Known for its robust construction and reliable electrical performance, it has been widely used in industrial and power electronics since its introduction. The device??s availability through reputable IC manufacturers ensures consistent quality and support, making it a trusted component for engineers designing power amplification and switching solutions.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current for the device is 10 amperes, allowing it to handle substantial load currents typically required in power amplification and switching applications.

What package type does this transistor use, and why is it beneficial?

It is housed in a TO-3 metal can package, which provides excellent thermal conductivity and mechanical durability, helping to dissipate heat efficiently and maintain reliable operation under high-power conditions.

Can this transistor be used in high-frequency applications?

While primarily designed for power applications, it has a transition frequency of approximately 3 MHz, suitable for moderate frequency switching and amplification tasks, but not optimized for high-frequency RF circuits.

What temperature range can this device operate within?

The transistor supports an operating junction temperature from -65??C up to +200??C, making it suitable for harsh industrial environments where temperature extremes are common.

How does the device??s low saturation voltage impact circuit performance?

Low saturation voltage reduces power loss during conduction, improving overall circuit efficiency and reducing heat generation, which enhances reliability and lowers cooling requirements in power electronic systems.