JANSP2N3499L-Transistor Overview
The JANSP2N3499L transistor is a robust NPN bipolar junction transistor designed for high voltage and high power switching applications. Engineered to operate reliably under demanding industrial environments, this device supports collector currents up to 10A and voltages up to 100V, making it suitable for a broad range of power amplification and switching uses. Its construction ensures dependable performance with low saturation voltage and strong gain characteristics. Ideal for engineers and sourcing specialists seeking a durable and efficient power transistor, this component balances performance with reliability. For detailed sourcing and technical data, visit IC Manufacturer.
JANSP2N3499L-Transistor Key Features
- High Current Handling: Supports continuous collector current up to 10A, enabling robust power delivery in demanding circuits.
- Elevated Collector-Emitter Voltage: Rated for up to 100V, allowing operation in high voltage switching and amplification applications.
- Low Saturation Voltage: Ensures efficient switching with minimal power loss, enhancing overall system efficiency.
- Complementary Gain Characteristics: Offers consistent current gain (hFE) across defined operating ranges for predictable circuit behavior.
- Durable Package Design: Encased in a TO-3 metal can package, providing excellent thermal dissipation and mechanical robustness.
- Reliable High-Power Operation: Designed for industrial and military-grade applications requiring stringent reliability.
JANSP2N3499L-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vceo) | 100 V |
| Collector Current (Ic) | 10 A (continuous) |
| Power Dissipation (Pd) | 115 W (max) |
| Gain Bandwidth Product (fT) | ?? 3 MHz |
| DC Current Gain (hFE) | 20 to 70 (at Ic = 3A) |
| Collector-Base Voltage (Vcbo) | 100 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| Package Type | TO-3 Metal Can |
| Operating Junction Temperature (Tj) | ?C65??C to +200??C |
JANSP2N3499L-Transistor Advantages vs Typical Alternatives
This transistor offers a superior combination of high voltage and high current capacity with a rugged TO-3 package for enhanced thermal management. Compared to typical alternatives, its low saturation voltage reduces power losses, improving energy efficiency. Its stable gain across a wide range of currents ensures predictable performance in power switching and amplification applications. The high maximum junction temperature rating also supports reliability in harsh operating environments.
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Typical Applications
- Power amplification circuits requiring high current and voltage handling, such as audio amplifiers and motor drivers, benefit from this transistor??s robust specifications and thermal stability.
- Industrial switching power supplies where efficient high power control is critical.
- Relay drivers and solenoid controllers in automation systems demanding reliable high-current switching.
- Military and aerospace applications that require rugged and reliable transistor performance under extreme conditions.
JANSP2N3499L-Transistor Brand Info
This transistor is part of the JAN series, known for military-grade reliability and stringent quality standards. The JANSP2N3499L is manufactured to meet or exceed MIL-SPEC requirements, ensuring consistent performance in critical defense and industrial applications. The product??s packaging and testing protocols emphasize ruggedness and longevity, making it a trusted choice among engineers designing high-power, high-reliability systems.
FAQ
What is the maximum collector current rating for this transistor?
The device supports a maximum continuous collector current of 10 amperes, allowing it to handle substantial power loads typical in industrial and military applications without compromising reliability.
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What voltage levels can the transistor safely operate at?
The transistor is rated for a collector-emitter voltage of up to 100 volts, making it suitable for high voltage switching and amplification tasks in various electronic systems.
What type of package does this transistor use and why is it important?
It is housed in a TO-3 metal can package, which provides excellent thermal conductivity and mechanical durability. This packaging helps dissipate heat effectively, improving performance and longevity in high-power applications.
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How does the transistor??s gain performance affect its use in circuits?
The device offers a DC current gain (hFE) ranging from 20 to 70 at specified current levels, providing predictable amplification characteristics essential for stable and efficient circuit design.
Is this transistor suitable for high-temperature environments?
Yes, it is designed to operate within a junction temperature range from ?C65??C up to +200??C, making it appropriate for demanding environments in industrial, military, and aerospace applications.
