JANSP2N3501-Transistor Overview
The JANSP2N3501-Transistor is a high-performance bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Its robust electrical characteristics ensure reliable operation in industrial and military-grade environments. Featuring a PNP configuration, this transistor offers dependable current gain with a maximum collector current rating suitable for medium power applications. The device is well-suited for use in analog circuits, signal processing, and power management systems. Engineered for durability and consistent performance, it meets stringent quality standards provided by IC Manufacturer.
JANSP2N3501-Transistor Key Features
- High collector current capability: Supports up to 800mA, enabling efficient current switching in medium power circuits.
- Wide voltage range: With a maximum collector-emitter voltage of 100V, it ensures versatility across various industrial applications.
- Stable current gain (hFE): Maintains a gain range between 40 and 100, providing predictable amplification for signal integrity.
- Durable TO-18 metal can package: Offers enhanced thermal conductivity and mechanical protection for reliable long-term operation.
JANSP2N3501-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | PNP Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vceo) | 100 V |
| Collector Current (Ic) | 800 mA |
| Power Dissipation (Pd) | 625 mW |
| Current Gain (hFE) | 40 to 100 |
| Transition Frequency (fT) | 30 MHz (typical) |
| Package Type | TO-18 Metal Can |
| Operating Temperature Range | -65??C to +200??C |
| Base-Emitter Voltage (Vbe) | 5 V (max) |
JANSP2N3501-Transistor Advantages vs Typical Alternatives
This transistor stands out with its high voltage tolerance and collector current capacity, which provide enhanced reliability under demanding conditions. Compared to typical alternatives, it offers consistent current gain and a robust metal can package that improves thermal management and mechanical durability. These factors make it an excellent choice for engineers requiring precision and longevity in amplification and switching tasks.
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Typical Applications
- Analog signal amplification in industrial control systems, ensuring stable and linear gain across varying temperature ranges.
- Switching applications in power management circuits where dependable current handling is essential.
- General-purpose amplification in audio and communication equipment requiring medium power transistor operation.
- Military and aerospace applications benefiting from the device??s wide operating temperature range and rugged packaging.
JANSP2N3501-Transistor Brand Info
The JANSP2N3501-Transistor is manufactured under stringent quality standards to meet military and industrial specifications. Its design focuses on delivering reliable performance in harsh environments, supported by a brand reputation for durability and precision. The product is part of a legacy lineup known for robust semiconductors used in critical electronic systems worldwide.
FAQ
What type of transistor is the JANSP2N3501?
The device is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching. Its PNP configuration allows current flow from emitter to collector when activated, suitable for various industrial circuits.
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What is the maximum collector current this transistor can handle?
The maximum continuous collector current rating is 800 milliamps, which supports medium power applications without compromising device reliability or performance.
What package does the JANSP2N3501 come in and why is it important?
This transistor is housed in a TO-18 metal can package, which provides superior thermal conductivity and mechanical protection compared to plastic packages, enhancing long-term stability in demanding environments.
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Can this transistor operate at extreme temperatures?
Yes, it supports an operating temperature range from -65??C up to +200??C, making it suitable for applications requiring resilience to wide temperature fluctuations.
What is the typical current gain (hFE) range for this transistor?
The current gain ranges from 40 to 100, providing consistent and reliable signal amplification, critical for maintaining signal integrity in analog and switching circuits.
