JANSP2N3499-Transistor Overview
The JANSP2N3499 is a robust NPN silicon power transistor designed for high voltage and power amplification applications. Featuring a collector-emitter voltage rating of 300V and a collector current capacity up to 10A, it excels in switching and linear amplifier circuits requiring reliable performance under demanding conditions. Its complementary design and specified gain characteristics make it suitable for industrial, automotive, and power supply use cases. Sourced from a reputable IC Manufacturer, this transistor delivers consistent electrical parameters ensuring dependable operation in high-stress environments.
JANSP2N3499-Transistor Key Features
- High voltage capability: With a collector-emitter voltage (VCEO) of 300V, it supports applications requiring substantial voltage handling, enhancing design flexibility.
- High current rating: The device can conduct collector currents up to 10A, enabling efficient power switching and amplification in demanding circuits.
- Power dissipation: Rated for 115W maximum power dissipation, it ensures thermal stability and durability during continuous operation.
- Gain performance: Featuring a DC current gain (hFE) between 15 to 70 at specified conditions, it balances amplification needs with linearity for accurate signal processing.
JANSP2N3499-Transistor Technical Specifications
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 300 | V |
| Collector-Base Voltage | VCBO | 400 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current (Continuous) | IC | 10 | A |
| Power Dissipation | PD | 115 | W |
| DC Current Gain (hFE) | hFE | 15 to 70 | ?? |
| Transition Frequency | fT | ?? | MHz |
| Junction Temperature | TJ | 200 | ??C |
JANSP2N3499-Transistor Advantages vs Typical Alternatives
This transistor offers a superior combination of high voltage and current ratings, making it more versatile compared to standard low-power transistors. Its robust power dissipation capacity enhances reliability in thermal-intensive environments. The balanced gain range ensures efficient signal amplification without excessive distortion, positioning it as a practical choice for power amplifiers and switching applications where stability and durability are critical.
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Typical Applications
- Power Amplification: Ideal for use in audio and RF power amplifier circuits where high current and voltage handling are required for effective signal amplification.
- Switching Regulators: Suitable for high-power switching regulators and DC-DC converters that demand reliable transistor switching capabilities.
- Industrial Motor Control: Used in motor driver circuits to control speed and torque with efficient power management.
- Automotive Electronics: Applicable in automotive systems requiring rugged transistor solutions for ignition and power control modules.
JANSP2N3499-Transistor Brand Info
The JANSP2N3499 is part of a legacy series of power transistors renowned for their robust construction and dependable electrical performance. Manufactured under stringent quality standards, this transistor is engineered to meet the rigorous demands of industrial and automotive sectors. Its design ensures consistency for engineers and sourcing specialists seeking a reliable component for high-voltage, high-current applications. The product reflects the trusted expertise of its producing IC Manufacturer, combining proven technology with practical usability.
FAQ
What is the maximum collector current rating for this transistor?
The device supports a maximum continuous collector current of 10 amperes. This high current rating allows it to be used effectively in power applications where substantial current flow is necessary without compromising device integrity.
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Can this transistor handle high voltage applications?
Yes, the transistor has a collector-emitter voltage rating of 300 volts and a collector-base voltage rating of 400 volts, making it suitable for circuits requiring high voltage tolerance, such as power amplifiers and switching regulators.
What is the typical power dissipation capability of this device?
The transistor is rated to dissipate up to 115 watts of power, which ensures it can operate reliably under high power loads when appropriate heat sinking is provided, maintaining stable performance over time.
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Is this transistor suitable for switching or linear amplifier applications?
Its specifications, including the gain range and power handling, make it well-suited for both switching and linear amplifier roles. The balanced gain provides sufficient amplification with controlled distortion, ideal for precision and power efficiency.
What temperature range can this transistor operate within?
The maximum junction temperature is specified at 200 degrees Celsius, indicating it can maintain performance in harsh thermal environments common in industrial and automotive electronics, provided proper thermal management is in place.
