JANSP2N3500-Transistor Overview
The JANSP2N3500-Transistor is a high-voltage NPN bipolar junction transistor designed for robust switching and amplification applications. It offers a collector-emitter voltage rating of up to 100 V and a continuous collector current of 0.7 A, making it suitable for medium-power industrial circuits. This transistor??s complementary balance of voltage and current handling ensures reliable performance in power regulation and signal amplification tasks. With a gain bandwidth product optimized for moderate-frequency applications, it fits well into control, driver, and interface circuitry. For detailed sourcing and technical data, visit IC Manufacturer.
JANSP2N3500-Transistor Key Features
- High voltage tolerance: Supports collector-emitter voltage up to 100 V, enabling use in circuits requiring substantial voltage handling capability.
- Moderate collector current capacity: Handles continuous collector current of 0.7 A, allowing effective switching and amplification in medium-power applications.
- Reliable gain characteristics: Provides a DC current gain (hFE) typically between 20 and 70, ensuring stable signal amplification under varying loads.
- Thermal robustness: Maximum junction temperature rated at 200??C, promoting durability and extended operational life in demanding environments.
JANSP2N3500-Transistor Technical Specifications
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current, Continuous (IC) | 0.7 A |
| Power Dissipation (Ptot) | 30 W |
| DC Current Gain (hFE) | 20 to 70 (at IC=0.1A) |
| Transition Frequency (fT) | 12 MHz (typical) |
| Junction Temperature (Tj max) | 200 ??C |
JANSP2N3500-Transistor Advantages vs Typical Alternatives
This transistor provides a superior combination of voltage handling and power dissipation compared to many standard NPN devices. Its high voltage rating up to 100 V and continuous current capacity of 0.7 A enable reliable operation in medium power circuits, reducing the risk of breakdown under load. Additionally, the wide temperature tolerance enhances operational reliability in harsh environments. These advantages make it a preferred choice over lower voltage or lower power transistors in industrial switching and amplifier roles.
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Typical Applications
- Power supply regulation circuits where stable switching at high voltage is required, supporting efficient control of voltage rails and load management.
- Audio frequency amplifiers that benefit from moderate gain and power handling capabilities for clear signal reproduction.
- Industrial motor driver circuits requiring reliable transistor switching to control medium-power motor loads.
- General-purpose switching applications in automation systems, leveraging its voltage and current ratings for robust operation.
JANSP2N3500-Transistor Brand Info
The JANSP2N3500-Transistor is manufactured under stringent quality controls to meet military and industrial standards. This product line is recognized for its durability and consistency, making it a trusted component in demanding electronic systems. The transistor??s design focuses on ensuring long service life and reliable performance even under rigorous conditions, reflecting the brand??s commitment to excellence in semiconductor technology.
FAQ
What is the maximum voltage the transistor can handle between collector and emitter?
The transistor can safely handle a maximum collector-emitter voltage (VCEO) of 100 volts. This rating ensures it can operate reliably in circuits with relatively high voltage requirements without risk of breakdown.
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What is the typical current gain range for this transistor?
The DC current gain (hFE) typically ranges from 20 to 70 at a collector current of 0.1 A. This gain range provides adequate amplification for various medium power applications where stable gain is essential.
Can this transistor operate at high temperatures?
Yes, the device is rated for a maximum junction temperature of 200??C, which allows it to function effectively in environments with elevated thermal conditions, improving its reliability in industrial applications.
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Is the transistor suitable for high-frequency applications?
With a transition frequency (fT) of approximately 12 MHz, this transistor is optimized for moderate frequency applications rather than very high-frequency RF use. It performs well in audio and control signal frequency ranges.
What power dissipation capability does the transistor have?
The maximum power dissipation is rated at 30 watts, enabling the transistor to handle significant power levels during switching or amplification without overheating, provided proper heat sinking is employed.
