JANKCC2N5339-Transistor-Die Overview
The JANKCC2N5339-Transistor-Die is a high-performance bipolar junction transistor die designed for precise amplification and switching applications in industrial electronics. It offers excellent electrical characteristics including stable gain and low noise, making it suitable for integration into advanced semiconductor modules. This transistor die supports reliable operation under varied conditions, ensuring consistent performance in complex circuits. Engineers and sourcing specialists can trust this device for robust signal control and amplification needs. For detailed sourcing and technical assistance, visit IC Manufacturer.
JANKCC2N5339-Transistor-Die Key Features
- High Current Gain: Enables efficient signal amplification, reducing the need for additional amplification stages.
- Low Collector-Emitter Saturation Voltage: Improves switching efficiency and reduces power losses in switching applications.
- Thermal Stability: Maintains consistent performance across a wide temperature range, increasing reliability in harsh operating environments.
- Compact Die Size: Facilitates easy integration into multi-chip modules and hybrid circuits, optimizing space and manufacturing costs.
JANKCC2N5339-Transistor-Die Technical Specifications
| Parameter | Value |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vceo) | 40 V |
| Collector Current (Ic) | 0.5 A |
| Power Dissipation (Pd) | 1 W |
| Gain Bandwidth Product (fT) | 100 MHz |
| Current Gain (hFE) | 100 to 300 |
| Transition Frequency | Up to 100 MHz |
| Operating Temperature Range | -55??C to +150??C |
| Collector-Base Voltage (Vcbo) | 60 V |
JANKCC2N5339-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior gain and switching characteristics compared to typical alternatives, enabling higher signal fidelity and reduced power dissipation. Its thermal stability and compact form factor enhance reliability and integration flexibility, making it ideal for modern semiconductor assemblies where space and performance are critical. The device??s robust electrical parameters ensure dependable operation in industrial and communications applications.
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Typical Applications
- Signal amplification circuits in industrial control systems, providing precise and stable transistor gain under varying operating conditions.
- Switching components in power management modules requiring low saturation voltage for efficient energy use.
- High-frequency amplifier stages in communication devices benefiting from the device??s bandwidth and gain properties.
- Hybrid integrated circuits where compact transistor dies enable space-saving designs without compromising performance.
JANKCC2N5339-Transistor-Die Brand Info
The JANKCC2N5339-Transistor-Die is developed and manufactured by a leading semiconductor provider known for quality and precision in transistor technologies. This product embodies the brand’s commitment to delivering reliable, high-performance components tailored for demanding industrial and electronic applications. Their rigorous quality control and advanced fabrication processes ensure consistent functionality and long-term durability of the transistor die.
FAQ
What type of transistor is the JANKCC2N5339-Transistor-Die?
This device is an NPN bipolar junction transistor die designed for amplification and switching. It provides a balance of high gain and frequency response suitable for various industrial electronics applications.
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What are the maximum voltage and current ratings for this transistor die?
The transistor supports a maximum collector-emitter voltage of 40 volts and a collector current up to 0.5 amperes, making it suitable for moderate power applications within these electrical limits.
How does the transistor die perform at high temperatures?
It maintains thermal stability across a wide operating temperature range from -55??C to +150??C, ensuring reliable performance in harsh or fluctuating environmental conditions common in industrial settings.
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Can this transistor die be integrated into multi-chip modules?
Yes, its compact die size facilitates easy integration into multi-chip and hybrid circuit assemblies, allowing designers to optimize space without sacrificing electrical performance.
What is the typical gain bandwidth product of this transistor?
The gain bandwidth product is approximately 100 MHz, enabling effective operation in high-frequency amplification and switching circuits commonly found in telecommunications and signal processing.
