JANTXV2N2920A-Dual-Transistor Overview
The JANTXV2N2920A-Dual-Transistor is a high-reliability, matched pair transistor device designed for precision analog circuits and switching applications. This dual transistor incorporates complementary NPN transistor pairs, providing balanced electrical characteristics that enhance circuit symmetry and reduce noise. Ideal for aerospace, military, and industrial environments, it meets stringent JAN (Joint Army-Navy) standards, ensuring durability under harsh conditions. The device??s robust construction and tight parameter matching make it a dependable component for amplification, switching, and signal processing tasks. For detailed sourcing and support, visit IC Manufacturer.
JANTXV2N2920A-Dual-Transistor Key Features
- Matched NPN transistor pair: Ensures consistent gain and low offset voltage, critical for precision differential amplifier designs.
- JAN military-grade qualification: Guarantees performance reliability in extreme temperature and mechanical stress environments.
- Low noise figure: Enhances signal integrity in high-frequency amplification and switching circuits, reducing distortion.
- High current gain (hFE): Improves overall circuit efficiency by reducing the required base drive current.
JANTXV2N2920A-Dual-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN Dual Matched Pair | |
| Collector-Emitter Voltage (VCEO) | 40 | V |
| Collector-Base Voltage (VCBO) | 60 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 10 | A |
| Power Dissipation (PD) | 625 | mW |
| Current Gain (hFE) | 100 to 300 | |
| Transition Frequency (fT) | 100 | MHz |
| Operating Temperature Range | -55 to +125 | ??C |
JANTXV2N2920A-Dual-Transistor Advantages vs Typical Alternatives
This dual transistor offers superior parameter matching and military-grade reliability compared to standard commercial transistors. Its tight gain matching and low noise enhance precision in analog circuits, while JAN certification ensures stable operation in extreme environments. These features provide engineers with a robust, high-performance solution that reduces circuit calibration time and improves long-term system stability.
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Typical Applications
- Precision differential amplifiers requiring matched transistor pairs for balanced gain and low offset voltage, common in instrumentation and sensor interfaces.
- High-frequency switching circuits where low noise and fast transition frequency enhance signal clarity and speed.
- Military and aerospace electronic systems demanding components qualified to withstand temperature extremes and mechanical stress.
- Signal processing modules in industrial control equipment benefiting from reliable transistor matching and consistent electrical performance.
JANTXV2N2920A-Dual-Transistor Brand Info
The JANTXV2N2920A-Dual-Transistor is produced under strict military standards, ensuring exceptional quality and reliability. This part is engineered to comply with Joint Army-Navy (JAN) specifications, reflecting rigorous screening and testing protocols. Designed for critical applications, the product embodies precision transistor technology with an emphasis on matched performance and durability. The brand focuses on delivering components that meet demanding industrial and defense system requirements.
FAQ
What defines the matching quality of the JANTXV2N2920A-Dual-Transistor?
The device features tightly matched transistor pairs with closely aligned current gain (hFE) and electrical parameters. This matching reduces offset voltage and enhances symmetry in differential amplifier circuits, improving accuracy and noise performance.
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How does the JAN certification benefit users of this dual transistor?
JAN certification ensures the device meets military-grade reliability standards, including temperature cycling, mechanical shock, and vibration testing. This guarantees stable operation in harsh environments and long-term durability for mission-critical applications.
What are the typical operating temperature limits for this transistor?
The transistor reliably operates within a temperature range of -55??C to +125??C, making it suitable for extreme environmental conditions encountered in aerospace and defense applications.
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Can this dual transistor be utilized in high-frequency circuits?
Yes, with a transition frequency (fT) of approximately 100 MHz, the device supports high-frequency switching and amplification tasks, maintaining low noise and stable gain at these frequencies.
What are the power dissipation capabilities of this dual transistor?
The maximum power dissipation is rated at 625 mW, allowing it to handle moderate power levels in compact circuit designs without excessive thermal stress, contributing to overall system reliability.
