JAN2N6299P-Darlington-PIND Overview
The JAN2N6299P-Darlington-PIND is a high-performance Darlington transistor designed for demanding industrial and military applications. Featuring a rugged PIND (Plastic Inorganic Non-Diffused) encapsulation, it provides enhanced thermal stability and mechanical robustness, ensuring reliability under harsh operating conditions. This transistor delivers high current gain and low saturation voltage, making it ideal for switching and amplification tasks in critical systems. The IC Manufacturer offers this component with JAN (Joint Army-Navy) certification, highlighting its compliance with strict quality and performance standards required by defense and aerospace markets.
JAN2N6299P-Darlington-PIND Key Features
- High current gain: Enables efficient amplification and switching with minimal input drive, reducing power consumption in control circuits.
- Low saturation voltage: Improves switching efficiency and minimizes heat dissipation, which is vital for thermal management in compact designs.
- Rugged PIND package: Enhances mechanical durability and thermal stability, supporting reliable operation in high-vibration and temperature-variable environments.
- JAN certification: Ensures compliance with military-grade reliability and quality standards, suitable for aerospace and defense applications.
JAN2N6299P-Darlington-PIND Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 100 | V |
| Collector-Base Voltage (VCBO) | 120 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 4 | A |
| Power Dissipation (Ptot) | 30 | W |
| DC Current Gain (hFE) | 10,000 (minimum) | ?C |
| Saturation Voltage (VCE(sat)) | 1.2 (typical) | V |
| Operating Junction Temperature (TJ) | -65 to +200 | ??C |
| Package Type | PIND (Plastic Inorganic Non-Diffused) | ?C |
JAN2N6299P-Darlington-PIND Advantages vs Typical Alternatives
This Darlington transistor stands out with its exceptional current gain and low saturation voltage, providing efficient switching and amplification compared to standard transistors. The rugged PIND packaging enhances reliability against mechanical stress and temperature extremes, making it a superior choice for military and aerospace applications. Additionally, JAN certification assures compliance with strict quality and performance criteria, setting it apart from commercial-grade alternatives in terms of durability and operational stability.
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Typical Applications
- High-current switching circuits in aerospace and defense systems requiring robust, reliable transistor performance under extreme conditions.
- Amplification stages in precision control equipment where high gain and low voltage drop are critical for signal integrity.
- Industrial motor control and power regulation circuits that benefit from the device??s high power dissipation capability and thermal stability.
- Military-grade electronic assemblies demanding components with proven durability, mechanical strength, and consistent electrical characteristics.
JAN2N6299P-Darlington-PIND Brand Info
The JAN2N6299P-Darlington-PIND is a product certified under the JAN standard, indicating its design and manufacturing adhere to rigorous military specifications for performance and reliability. This ensures the device meets stringent requirements for vibration resistance, temperature tolerance, and electrical precision. The PIND encapsulation technology used in this product enhances physical ruggedness and thermal management, reinforcing its position as a dependable choice for defense contractors and industrial engineers seeking trustworthy semiconductor solutions.
FAQ
What is the significance of the PIND package in this Darlington transistor?
The PIND package (Plastic Inorganic Non-Diffused) offers superior mechanical durability and enhanced thermal stability compared to typical plastic packages. This makes the transistor more resistant to vibration, shock, and temperature fluctuations, which is critical in military and aerospace environments.
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How does the high DC current gain benefit circuit design?
High DC current gain allows the transistor to amplify weak input signals into much stronger output currents. This reduces the need for additional amplification stages and lowers the input drive requirements, improving overall circuit efficiency and simplifying design complexity.
What operational temperature range does this device support?
The device operates reliably over a wide junction temperature range from -65??C to +200??C. This broad temperature tolerance ensures stable performance in harsh environmental conditions, typical in aerospace and defense applications.
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Why is JAN certification important for this transistor?
JAN certification guarantees that the transistor meets military-grade standards for quality, reliability, and performance. This certification is essential for applications where failure is not an option, such as in defense and aerospace systems, providing confidence in the component??s robustness.
Can this transistor be used for high-power switching applications?
Yes, with a power dissipation rating of 30W and a maximum collector current of 4A, this Darlington transistor is well-suited for high-power switching tasks. Its low saturation voltage also reduces power losses, contributing to efficient operation in demanding power control circuits.
