JANTX2N6298-Darlington Overview
The JANTX2N6298 Darlington transistor is a high-voltage, high-current silicon NPN power transistor designed for demanding industrial and military applications requiring robust switching and amplification capabilities. It features a Darlington configuration that provides high current gain, enabling efficient control of large loads with minimal input current. With a collector-emitter voltage rating of 250 V and collector current up to 16 A, this device supports high-power operations while maintaining thermal stability. Its rugged design ensures reliable performance under harsh operating conditions, making it suitable for critical applications where durability and precision are essential. For more detailed technical information, visit IC Manufacturer.
JANTX2N6298-Darlington Key Features
- High Current Gain: The Darlington pair configuration offers significant current amplification, reducing the required base drive current and enabling efficient load control.
- High Voltage Handling: Rated for a collector-emitter voltage (VCEO) of 250 V, it supports high-voltage switching applications reliably.
- Robust Collector Current: Capable of handling collector currents up to 16 A continuously, which suits heavy-duty power control.
- Thermal Stability: Designed with a TO-3 metal can package ensuring effective heat dissipation for high-power applications.
JANTX2N6298-Darlington Technical Specifications
| Parameter | Specification | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 250 | Volts |
| Collector-Base Voltage (VCBO) | 400 | Volts |
| Emitter-Base Voltage (VEBO) | 7 | Volts |
| Collector Current (Continuous, IC) | 16 | Amperes |
| Power Dissipation (Ptot) | 160 | Watts |
| Gain Bandwidth Product (fT) | 6.5 | MHz |
| DC Current Gain (hFE) | 1000 min | ?? |
| Operating Junction Temperature (TJ) | -65 to +200 | ??C |
JANTX2N6298-Darlington Advantages vs Typical Alternatives
This Darlington transistor offers superior current gain and voltage handling compared to standard single-transistor configurations, enabling enhanced sensitivity and power efficiency in switching applications. Its high collector current rating and robust thermal management provide improved reliability and accuracy under heavy loads. These features translate into better integration potential within high-power circuits, making it a preferred choice for industrial-grade power amplification and control tasks.
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Typical Applications
- High-power switching in industrial motor control circuits, where reliable current amplification and voltage tolerance are critical for managing large inductive loads.
- Power amplifiers requiring high gain and low input drive currents to efficiently control output stages.
- Voltage regulators and power supply circuits demanding robust transistors for stable operation under varying loads.
- Military and aerospace electronics where ruggedness and long-term reliability under extreme conditions are mandatory.
JANTX2N6298-Darlington Brand Info
The JANTX2N6298 is a military-grade, high-performance Darlington transistor manufactured to stringent quality standards. It is produced in a TO-3 metal can package for enhanced heat dissipation and mechanical robustness. The device is compliant with military specifications, ensuring durability and consistent performance in harsh environments. This transistor aligns with the brand??s commitment to delivering reliable, high-current semiconductor components for critical industrial and defense applications.
FAQ
What is the maximum collector current rating for this Darlington transistor?
The maximum continuous collector current for this device is 16 amperes, allowing it to handle substantial load currents typical in power control and amplification applications.
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What voltage levels can the JANTX2N6298 safely operate under?
It is rated for a collector-emitter voltage of 250 volts and a collector-base voltage of 400 volts, making it suitable for high-voltage switching and amplification tasks.
How does the Darlington configuration benefit circuit design?
The Darlington pair structure provides very high current gain, significantly reducing the base drive current required. This improves efficiency and simplifies driver circuitry in power control systems.
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What are the thermal characteristics of this transistor?
Housed in a TO-3 metal package, it supports power dissipation up to 160 watts and operates reliably across a junction temperature range from -65??C to +200??C, ensuring stable performance under thermal stress.
Is this transistor suitable for military or aerospace applications?
Yes, the device is manufactured to military standards, ensuring ruggedness, reliability, and performance consistency in demanding environments such as aerospace and defense electronics.
