JANKCCR2N5153-Transistor-Die Overview
The JANKCCR2N5153-Transistor-Die is a high-performance NPN bipolar junction transistor die designed for integration into advanced semiconductor modules. It features a collector-emitter voltage rating of 150 V and a continuous collector current up to 4 A, making it suitable for medium-power switching and amplification applications. The die??s compact design supports efficient thermal management and low parasitic capacitances, enabling high-speed operation with reliable performance. This transistor die is ideal for use in power management, signal amplification, and industrial control circuits where precise switching and durability are critical. For detailed sourcing and technical inquiries, visit IC Manufacturer.
JANKCCR2N5153-Transistor-Die Key Features
- High voltage capability: Rated for 150 V collector-emitter voltage, enabling use in robust power switching applications.
- Moderate current handling: Supports up to 4 A continuous collector current, facilitating effective medium-power amplification tasks.
- Low saturation voltage: Ensures efficient switching with minimal power loss, improving overall system energy efficiency.
- Compact die size: Allows seamless integration into custom semiconductor assemblies and supports optimized thermal dissipation.
- Fast switching speed: Low capacitance characteristics enhance frequency response for high-speed electronic circuits.
- Robust thermal limits: Maximum junction temperature rated at 150??C ensures reliability under demanding operating conditions.
- Optimized gain characteristics: Current gain (hFE) ranges between 20 to 70, providing predictable amplification performance.
JANKCCR2N5153-Transistor-Die Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 150 | V |
| Collector Current Continuous (IC) | 4 | A |
| Collector Current Pulsed (ICM) | 8 | A |
| Power Dissipation (Ptot) | 40 | W |
| Transition Frequency (fT) | 100 | MHz |
| Gain Bandwidth Product | 100 | MHz |
| Current Gain (hFE) | 20?C70 | ?C |
| Maximum Junction Temperature (Tj) | 150 | ??C |
| Collector-Base Voltage (VCBO) | 150 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
JANKCCR2N5153-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers a balanced combination of high voltage tolerance and moderate current capacity compared to typical alternatives, making it highly suitable for medium-power industrial circuits. Its low saturation voltage reduces power losses, enhancing overall efficiency. Additionally, the compact die format supports tighter integration and improved thermal management, which increases reliability and circuit longevity in demanding environments.
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Typical Applications
- Power switching in industrial motor controllers where medium voltage and current handling are required, ensuring precise and reliable operation.
- Signal amplification stages in audio and instrumentation circuits demanding stable gain and low distortion.
- Driver stages for relays and solenoids, benefiting from fast switching times and robust voltage ratings.
- Custom semiconductor modules in power management systems, leveraging the die??s compact size and thermal resilience for efficient design.
JANKCCR2N5153-Transistor-Die Brand Info
The JANKCCR2N5153-Transistor-Die is manufactured by a specialized semiconductor supplier focused on delivering high-quality transistor dies for industrial and commercial electronics. This product reflects the brand??s commitment to precision, reliability, and performance, supporting engineers and designers in creating efficient and durable electronic systems. The brand is known for stringent quality controls and comprehensive datasheet documentation, ensuring transparency and trust for sourcing specialists and application engineers alike.
FAQ
What is the maximum operating voltage for this transistor die?
The maximum collector-emitter voltage rating is 150 V, which allows the transistor die to be used in circuits requiring moderate to high voltage switching capabilities without risking breakdown.
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What current levels can this transistor die safely handle?
This device supports a continuous collector current of up to 4 A and a pulsed collector current up to 8 A, making it suitable for medium-power applications with occasional higher current demands.
How does the transistor die??s size impact its performance?
The compact die size allows for better integration into custom semiconductor packages and facilitates efficient thermal management, which improves reliability and reduces the risk of overheating during operation.
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What is the significance of the current gain (hFE) range specified?
The current gain range of 20 to 70 ensures predictable and stable amplification characteristics, enabling designers to accurately model the transistor??s performance within signal and switching applications.
Can this transistor die operate at high frequencies?
Yes, with a transition frequency (fT) of approximately 100 MHz, the die supports high-speed switching and amplification tasks, making it suitable for RF and fast digital circuit applications.
