JAN2N656-Transistor by JAN | High-Performance Switching Transistor | TO-18 Package

  • This transistor efficiently controls current flow, enabling precise switching in electronic circuits.
  • It features a voltage rating suitable for moderate power applications, ensuring stable operation under load.
  • The compact package reduces board space, allowing for denser circuit designs and easier integration.
  • Ideal for use in power regulation modules, it helps maintain consistent voltage levels for sensitive components.
  • Manufactured to meet industry standards, this component ensures reliable performance over extended use.
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JAN2N656-Transistor Overview

The JAN2N656 transistor is a high-performance bipolar junction transistor (BJT) designed for medium-power amplification and switching applications. This device features robust electrical characteristics, including a maximum collector-emitter voltage of 30V and collector current up to 1.5A, making it suitable for a wide range of industrial and commercial electronics projects. With a gain bandwidth product (fT) of 100 MHz, it supports moderate frequency operation, ensuring reliable signal amplification. Its rugged construction and JAN (Joint Army-Navy) quality standards ensure enhanced reliability in demanding environments. Available through IC Manufacturer, this transistor is an ideal choice for engineers seeking a dependable NPN transistor for switching and amplification tasks.

JAN2N656-Transistor Key Features

  • High Collector Current Capacity: Supports up to 1.5A collector current, enabling efficient handling of moderate power loads in switching and amplification applications.
  • Collector-Emitter Voltage Rating: Rated for 30V maximum voltage, providing robust operation within typical industrial voltage ranges.
  • Gain Bandwidth Product (fT): 100 MHz frequency response allows for effective use in moderate-speed signal amplification and switching circuits.
  • JAN Quality Standard: Manufactured to Joint Army-Navy standards, ensuring superior reliability and performance under harsh environmental conditions.

JAN2N656-Transistor Technical Specifications

Parameter Specification Unit
Collector-Emitter Voltage (VCEO) 30 V
Collector-Base Voltage (VCBO) 40 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1.5 A
Power Dissipation (Ptot) 20 W
Gain Bandwidth Product (fT) 100 MHz
DC Current Gain (hFE) 40 to 160 (typical range)
Junction Temperature (Tj) +200 ??C

JAN2N656-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage and current ratings with a high gain bandwidth product, making it suitable for diverse amplification and switching roles. Compared to typical discrete BJTs, it delivers superior reliability under harsh conditions due to its JAN qualification. Its moderate power dissipation and extended junction temperature rating permit stable performance in demanding industrial environments, providing engineers with a dependable solution that integrates easily into existing designs.

Typical Applications

  • Medium-power amplifier stages in audio and signal processing circuits requiring moderate frequency response and reliable gain.
  • Switching applications in industrial control systems where robust current handling is necessary.
  • Driver stages for relay and solenoid control circuits demanding efficient current switching capability.
  • General-purpose transistor use in test and measurement equipment benefiting from its stable electrical characteristics and JAN quality assurance.

JAN2N656-Transistor Brand Info

The JAN2N656 is part of a family of transistors manufactured to meet stringent Joint Army-Navy (JAN) military standards. These standards ensure enhanced quality, reliability, and performance consistency across batches. The JAN designation reflects rigorous screening and testing processes that guarantee suitability for aerospace, defense, and industrial applications where failure is not an option. This product is supplied by reputable semiconductor manufacturers committed to delivering high-quality discrete components for mission-critical applications.

FAQ

What is the maximum collector current rating for this transistor?

The transistor supports a maximum collector current of 1.5 amperes, making it suitable for medium-power switching and amplification tasks within this current range.

What voltage levels can the JAN2N656 transistor safely handle?

This device has a maximum collector-emitter voltage rating of 30 volts and a collector-base voltage rating of 40 volts, allowing it to operate safely within these voltage limits in typical industrial circuits.

How does the gain bandwidth product affect the transistor??s application?

A gain bandwidth product of 100 MHz enables the transistor to effectively amplify signals at moderate frequencies, which is important for applications such as audio amplification and certain switching functions requiring fast response.

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产品中间询盘

What does the JAN qualification imply about this transistor??s reliability?

The JAN (Joint Army-Navy) qualification indicates that the transistor has undergone rigorous testing to meet military-grade standards. This ensures enhanced reliability, robust construction, and suitability for use in harsh or mission-critical environments.

Can this transistor be used in high-temperature environments?

Yes, the transistor is rated for a maximum junction temperature of 200??C, allowing it to maintain stable operation in environments with elevated temperatures typical of many industrial and aerospace applications.

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