JANKCCL2N3501-Transistor-Die High-Speed Switching Transistor Die ?C Premium Semiconductor

  • This transistor die controls current flow efficiently, enabling precise signal amplification in electronic circuits.
  • Its high voltage rating ensures stable operation under demanding electrical conditions, enhancing device performance.
  • The compact die size supports integration into space-limited designs, optimizing overall board layout.
  • Ideal for use in power management modules, it improves energy regulation and system responsiveness.
  • Manufactured with strict quality controls, the part maintains consistent reliability across varied operating environments.
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产品上方询盘

JANKCCL2N3501-Transistor-Die Overview

The JANKCCL2N3501-Transistor-Die is a high-performance semiconductor component designed specifically for power amplification and switching applications. This transistor die offers robust electrical characteristics suitable for integration into various industrial and consumer electronic devices. Engineered for reliability and efficiency, it supports high voltage and current ratings, making it ideal for demanding electronic circuits requiring stable operation and thermal resilience. Sourcing specialists and engineers will appreciate its compact die form factor, which facilitates precise assembly and integration within multi-chip modules or custom packages. For detailed specifications and procurement, visit IC Manufacturer.

JANKCCL2N3501-Transistor-Die Key Features

  • High voltage handling capability: Supports up to 350V, enabling usage in medium to high-voltage power circuits.
  • Current capacity: With a maximum collector current rating of 1A, it ensures sufficient drive for various load conditions.
  • Low saturation voltage: Minimizes power loss during switching, enhancing overall system efficiency and reducing heat generation.
  • Compact die size: Facilitates integration into compact module designs, optimizing PCB real estate.
  • Thermal stability: Designed to maintain performance under elevated junction temperatures, improving device reliability.
  • Fast switching speed: Ideal for amplifier and switching applications requiring rapid response times.
  • Robust electrical isolation: Ensures safe operation in circuits with high transient voltages.

JANKCCL2N3501-Transistor-Die Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (Vce)350V
Collector Current (Ic)1A
Power Dissipation (Pd)1.2W
Gain Bandwidth Product (fT)100MHz
Current Gain (hFE)40?C320??
Saturation Voltage (Vce(sat))0.5V
Operating Junction Temperature (Tj)-55 to 150??C
Storage Temperature (Tstg)-55 to 150??C
Package TypeDie??

JANKCCL2N3501-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior high-voltage tolerance and current handling compared to typical alternatives, providing enhanced reliability in power switching and amplification roles. Its low saturation voltage reduces energy loss, increasing overall circuit efficiency. The compact die size allows for flexible integration into custom designs, while its robust thermal performance ensures consistent operation under demanding industrial conditions, making it a preferred choice for engineers focused on performance and durability.

Typical Applications

  • Power amplification circuits in industrial control systems, requiring stable voltage and current management for reliable operation.
  • Switching regulators and power converters where efficient switching and thermal reliability are critical.
  • Signal amplification in audio and communication devices benefiting from fast switching speed and gain consistency.
  • Embedded systems and multi-chip module assemblies that demand compact transistor dies for space-efficient designs.

JANKCCL2N3501-Transistor-Die Brand Info

The JANKCCL2N3501-Transistor-Die is produced by a reputable semiconductor manufacturer renowned for delivering high-quality transistor dies engineered for industrial and commercial electronics. This product exemplifies the brand??s commitment to precision manufacturing, ensuring tight parameter control and superior electrical performance. The die is tailored to meet stringent standards for power handling and reliability, supporting a wide range of applications from amplification to switching. The brand??s extensive experience in semiconductor fabrication guarantees consistent product availability and technical support for integration in complex electronic assemblies.

FAQ

What is the maximum voltage rating of this transistor die?

The transistor die is rated for a maximum collector-emitter voltage of 350 volts, making it suitable for medium and high-voltage applications while maintaining safe and reliable operation.

Can the transistor die handle continuous high current loads?

Yes, the device supports a continuous collector current of up to 1 ampere, allowing it to drive moderate loads efficiently without compromising performance or thermal stability.

What temperature ranges can this transistor die operate within?

This component is designed to operate reliably across a wide junction temperature range from -55??C up to 150??C, ensuring durability in harsh industrial environments.

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产品中间询盘

Is the transistor die compatible with high-frequency switching applications?

With a gain bandwidth product of approximately 100 MHz and fast switching capabilities, this die is well-suited for high-frequency switching and amplification tasks.

How does the die form factor benefit circuit integration?

The compact die form allows precise placement within multi-chip modules or custom packaging, reducing PCB space usage and enabling flexible design configurations for advanced electronic assemblies.

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